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Pulse frequency modulation type image sensor circuit and processing method of the same

A pulse frequency modulation and image sensor technology, applied in image communication, television, electrical components, etc., can solve problems such as complex structures

Active Publication Date: 2017-11-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to solve the problem of complex structure of the current PFM image sensor with high precision, and to provide a pulse frequency modulation image sensor circuit and its processing method

Method used

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  • Pulse frequency modulation type image sensor circuit and processing method of the same
  • Pulse frequency modulation type image sensor circuit and processing method of the same
  • Pulse frequency modulation type image sensor circuit and processing method of the same

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Embodiment

[0073] For the first pulse frequency modulation image sensor circuit in the embodiment of the present invention, its structural schematic diagram can be found in Figure 5 , including a power supply input terminal VCC, a photodetector Det1, an integral node capacitor Cint, a comparator, a first integral node reset switch S0, a counter, a circuit output terminal, a ground wire, an external control signal input terminal, and a group of gating control switches ( Including the first gating control switch Sc1, the second gating control switch Sc2, ..., the Nth gating control switch ScN), a logic module and a set of fixed reference voltage input terminals, the anode of the photodetector Det1 is connected to the ground wire , its negative pole is connected to the power supply input terminal VCC through the first integral node reset switch S0, one end of the integral node capacitor Cint is connected to the ground wire, and the other end is connected to the negative pole of the photodet...

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Abstract

The invention relates to the integrated circuit technology. The invention provides a pulse frequency modulation type image sensor circuit and a processing method of the same, solving the problem that a current PFM (Pulse Frequency Modulation) type image sensor is complicated in structure at the high precision moment. The technical scheme of the pulse frequency modulation type image sensor circuit is characterized in that the pulse frequency modulation type image sensor circuit includes a power supply input terminal, a photoelectric detector, an integral node capacitor, a comparator, a first integral node reset switch, a counter, a circuit output terminal, a ground wire, an external control signal input terminal, a second integral node reset switch, a group of gating control switches, a logic module and a group of fixed reference voltage input terminals. The pulse frequency modulation type image sensor circuit has the advantages of reducing difficulty and complexity of circuit design, and is suitable for a pulse frequency modulation type image sensor.

Description

technical field [0001] The invention relates to integrated circuit technology, in particular to a processing circuit of a pulse frequency modulation type image sensor. Background technique [0002] CMOS image sensors have been widely used in traditional fields such as space remote sensing, industrial machine vision and commercial digital photography due to their advantages of high integration, low power consumption and low cost. Typical CMOS image sensors output signals in the form of voltage or current, and active pixel sensors occupy the mainstream due to their superior comprehensive performance. The working process is as follows: First, the photodetector generates a corresponding Photocurrent; then, the photocurrent charges (or discharges) the integral capacitor to obtain the corresponding integral voltage; then, the integral voltage is controlled by the active stage to control the output voltage or current; finally, the subsequent processing circuit controls the previous...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/3745
CPCH04N25/77H04N25/76
Inventor 王向展吴强陈同少刘洋于奇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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