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SnSe2 crystal compound as well as preparation method and application thereof

A technology for crystalline compounds and ingots, applied in the field of SnSe2 crystalline compounds and their preparation, can solve the problems of long time required, expensive equipment, limited output, etc., achieve good single phase and density, improve thermoelectric performance, and preparation time. short effect

Inactive Publication Date: 2017-11-28
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While the solvent method synthesized SnSe 2 It is more complicated, the precursor solution containing Sn and Se is very expensive, and the requirements for equipment are also high in the whole experimental process, and SnSe 2 The output is limited; chemical vapor deposition is at medium temperature or high temperature, the solid substance formed by the gas phase chemical reaction between gaseous initial compounds is deposited on the substrate, it takes a long time, and the equipment is very expensive, which is not conducive to industrial promotion application
Although the mechanical alloying method has lower requirements on instruments and equipment, and takes a shorter time, the generated SnSe 2 There are many impurity phases in it, which is not conducive to ensuring the SnSe 2 Compound properties

Method used

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  • SnSe2 crystal compound as well as preparation method and application thereof
  • SnSe2 crystal compound as well as preparation method and application thereof
  • SnSe2 crystal compound as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A SnSe 2 The preparation method of crystal compound, comprises the following steps:

[0038] 1) Using Sn particles and Se particles as raw materials, weigh the Sn particles and Se particles according to the molar ratio of 1:2, the total weight is 30g, mix the weighed raw materials evenly and put them into the zone melting process special Vacuum-sealed in a quartz glass tube, then put into a melting furnace for melting for 24 hours, the melting temperature is 923K, and cool with the furnace to obtain an ingot material;

[0039] 2) Place the quartz glass tube with the ingot material in step 1) in a zone melting furnace for directional growth using a zone melting process. The specific steps are as follows: place the quartz glass tube with the ingot material along the axial direction of the heating ring , and place its bottom in the middle of the heating ring, the melting temperature in the control zone is 1073K, and the melting temperature is 1.8mm h -1 Move the heating ...

Embodiment 2

[0047] A SnSe 2 The preparation method of crystal compound, comprises the following steps:

[0048] 1) With Sn particles, Se particles and SnCl 2 Powder as raw material, according to the chemical formula SnSe 1.98 Cl 0.02 The stoichiometric ratio of each element is weighed, and the total weight is 30g. The weighed raw materials are mixed evenly and put into a special quartz glass tube for zone melting, then vacuum-sealed, and then put into a melting furnace for melting for 24 hours. The melting temperature is 923K, and the ingot material is obtained by cooling with the furnace;

[0049] 2) Place the quartz glass tube with the ingot material in step 1) in a zone melting furnace for directional growth using a zone melting process. The specific steps are as follows: place the quartz glass tube with the ingot material along the axial direction of the heating ring , and place its bottom in the middle of the heating ring, the melting temperature in the control zone is 1073K, and...

Embodiment 3

[0053] A SnSe 2 The preparation method of crystal compound, comprises the following steps:

[0054] 1) With Sn particles, Se particles and SnCl 2 Powder as raw material, according to the chemical formula SnSe 1.99 Cl 0.01 The stoichiometric ratio of each element is weighed, and the total weight is 30g. The weighed raw materials are mixed evenly and put into a special quartz glass tube for zone melting, then vacuum-sealed, and then put into a melting furnace for melting for 24 hours. The melting temperature is 873K, and the ingot material is obtained by cooling with the furnace;

[0055] 2) Place the quartz glass tube with the ingot material in step 1) in a zone melting furnace for directional growth using a zone melting process. The specific steps are as follows: place the quartz glass tube with the ingot material along the axial direction of the heating ring , and place its bottom in the middle of the heating ring, the melting temperature in the control zone is 1073K, and...

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Abstract

The invention discloses a preparation method of an SnSe2 crystal compound. Firstly, Sn particles, Se particles and SnCl2 powder are used as raw materials; heating melting and cooling are performed to obtain ingot materials; then, the ingot materials are put into a zone melting furnace; a zone melting process is used for directional growth; the SnSe2 crystal compound is obtained. The preparation of the SnSe2 compound pseudo-single crystal material by a process of combining melting with zone melting is provided for the first time; the obtained product has good single phase performance and compactness, and has a good pseudo-single crystal structure; the SnSe2 base material is subjected to doping improvement; the thermoelastic performance of the doping sample can be improved. In addition, the preparation method provided by the invention has the advantages that the preparation time is short; the operation is simple; the equipment requirement is low; the method is suitable for large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of new energy materials, in particular to a SnSe 2 Crystalline compound and its preparation method and application. Background technique [0002] About 70% of the energy consumed in the world every year is wasted in the form of waste heat. If the waste heat can be effectively recycled, the problem of energy shortage will be greatly alleviated. Thermoelectric conversion technology is a technology that uses the Seebeck effect and Peltier effect of semiconductor thermoelectric materials to directly convert thermal energy and electrical energy, including thermoelectric power generation and thermoelectric refrigeration. This technology has the characteristics of small system size, high reliability, low operating cost, long life, simple manufacturing process, environmental friendliness, and wide applicable temperature range. field has been widely used. As a new type of environmentally friendly clean energy conversion tec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B13/00C30B28/08C30B29/46H01L35/16H10N10/852
CPCC30B13/00C30B28/08C30B29/46H10N10/852
Inventor 唐新峰舒月姣郑刚柳伟鄢永高
Owner WUHAN UNIV OF TECH