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Internet of things oriented and self-powered LDMOS (Laterally Diffused Metal Oxide Semiconductor) amplifier

A self-powered, amplifier technology, applied in the field of micro-electronic mechanical systems, to achieve the effect of being conducive to heat dissipation, enhancing heat dissipation performance, and easy to achieve

Active Publication Date: 2017-12-01
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Relatively, if the heat loss can be utilized, the power consumption, efficiency and reliability of the power amplifier will be greatly improved

Method used

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  • Internet of things oriented and self-powered LDMOS (Laterally Diffused Metal Oxide Semiconductor) amplifier
  • Internet of things oriented and self-powered LDMOS (Laterally Diffused Metal Oxide Semiconductor) amplifier
  • Internet of things oriented and self-powered LDMOS (Laterally Diffused Metal Oxide Semiconductor) amplifier

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Embodiment Construction

[0024] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0025] see Figure 1-5 , the present invention proposes an LDMOS amplifier with self-power supply function for the Internet of Things. The LDMOS tube amplifier mainly includes: LDMOS with thermoelectric conversion function, resistors, capacitors, voltage stabilizing circuits, and large-capacitance rechargeable batteries. The signal is input to the gate of the LDMOS amplifier through the DC blocking capacitor C1. The resistors R1 and R2 are the upper and lower biases of the gate respectively. The source of the LDMOS amplifier is grounded through the resistor R3, and the drain of the LDMOS amplifier is connected to the gate through the resistor R4. To VDD, the amplified signal is output through the drain of the LDMOS amplifier tube, the drain of the LDMOS amplifier tube is connected to the load resistor R5 through the DC blocking capacitor C2...

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Abstract

The invention provides an Internet of things oriented and self-powered LDMOS (Laterally Diffused Metal Oxide Semiconductor) amplifier. The LDMOS amplifier comprises a LMOS amplifier with a thermoelectric conversion function, resistors, a capacitor, a voltage stabilizing circuit and a bulky capacitor charging battery. A silicon dioxide layer grows on the conventional LDMOS amplifying tube; 12 thermocouples consisting of metal Al-type thermoelectric arms and polycrystalline silicon N-type thermoelectric arms are manufactured on a source drain gate of the LDMOS amplifying tube, and are connected in series through a metal wire; and two remaining electrodes are taken as a Seebeck voltage output positive electrode and a Seebeck voltage output negative electrode. A signal is input into a grid electrode of the LDMOS amplifier through a blocking condenser C1; a resistor R1 and a resistor R2 construct a bias; a source electrode of the LDMOS amplifier is grounded through a resistor R3; an amplified signal is output through a drain electrode; the Seebeck voltage output negative electrode is grounded, and the Seebeck voltage output positive electrode is connected with the voltage stabilizing circuit and the bulky capacitor. According to the Seebeck effect, the LDMOS amplifier is used for recycling and converting waste heat generated by the LDMOS amplifier in working into power energy for storing power and self-powering, so that the heat-dissipation performance is enhanced, meanwhile, the service life is prolonged.

Description

technical field [0001] The invention relates to the technical field of micro-electro-mechanical systems (MEMS), in particular to an LDMOS tube amplifier with self-power supply function facing the Internet of Things. LDMOS stands for Laterally Diffused Metal Oxide Semiconductor. Background technique [0002] With the development of new technologies in the fields of Internet of Things communication and military, as well as people's pursuit of low cost, power amplifiers are developing towards higher output power, efficiency and reliability, which also requires people to continuously reduce the cost of thermal control. the cost of. Relatively, if the heat loss can be utilized, the power consumption, efficiency and reliability of the power amplifier will be greatly improved. [0003] The basic structural unit of a thermoelectric generator is a thermocouple, which is formed by connecting an N-type semiconductor and a P-type semiconductor (or metal) in series. Due to the Seebeck...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/16H03F3/193H01L29/78H01L23/38
CPCH01L23/38H01L29/7817H03F1/301H03F3/16H03F3/193H03F2200/451
Inventor 廖小平陈友国
Owner SOUTHEAST UNIV