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Fault detection method and circuit

A fault detection circuit and fault detection technology, applied in the direction of measuring electricity, measuring electrical variables, measuring current/voltage, etc., can solve problems such as unusable products and damage to power semiconductor devices, so as to solve the unusable products and improve product quality. performance effect

Pending Publication Date: 2017-12-08
GREE ELECTRIC APPLIANCES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a fault detection method and circuit to at least solve the technical problem that the product cannot continue to be used due to the damage of the power semiconductor device

Method used

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  • Fault detection method and circuit

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Effect test

Embodiment 1

[0030] According to an embodiment of the present invention, a method embodiment of a fault detection method is provided. It should be noted that the steps shown in the flow chart of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and, Although a logical order is shown in the flowcharts, in some cases the steps shown or described may be performed in an order different from that shown or described herein.

[0031] figure 2 is a fault detection method according to an embodiment of the present invention, such as figure 2 As shown, the method includes the following steps:

[0032] Step S102, detecting the current flowing through the test element.

[0033] In the above step S102 of the present embodiment, the test element is connected in series with the fault detection object, and it is judged whether the fault detection object is damaged (such as a short circuit or an open circuit) by detecting the magnitude of t...

Embodiment 2

[0060] According to an embodiment of the present invention, an embodiment of a fault detection circuit is provided, Figure 4 is a fault detection circuit according to an embodiment of the present invention, such as Figure 4 As shown, the fault detection circuit includes a fault detection object 20, a test element 22 and a switch unit 24 connected in series with the fault detection object 20, and a main chip 26 connected with the test element 22; When the currents of the elements 22 are greater than the first preset value, the main chip 26 controls the switch unit 24 to turn off.

[0061] In the fault detection circuit of this embodiment, a test element 22 and a switch unit 24 connected in series with the fault detection object 20 are arranged in the circuit, and the main chip 26 detects the current flowing through the test element 22 to determine whether a short circuit fault occurs in the fault detection object 20 , and in the case of a short-circuit fault, the switch unit...

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PUM

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Abstract

The invention discloses a fault detection method and circuit. The method comprises the steps that current flowing through a test element is detected, wherein the test element is connected in series with a fault detection object; and if the detected current within a preset period of time is greater than a first preset value, a switch unit connected in series with the fault detection object is controlled to be disconnected. The technical problems that the product cannot be used any longer because of the damage of the power semiconductor device can be solved.

Description

technical field [0001] The invention relates to the field of circuit fault detection, in particular to a fault detection method and a circuit. Background technique [0002] The PFC (Power Factor Correction, power factor correction) circuit has the function of improving the power factor and raising the bus voltage. Its structure is as follows: figure 1 As shown, AC-L and N respectively represent the live wire and neutral wire of single-phase AC power, D1 to D4 are rectifier diodes, C1 is the bus capacitor, and L is the PFC inductor. The basic principle of the PFC circuit is to charge and discharge the inductance L by controlling the on-off time ratio of the power semiconductor device Q1, so as to increase the bus voltage. [0003] However, the power semiconductor device Q1 is easily damaged, and if the power semiconductor device Q1 is damaged (such as a short circuit), the product cannot continue to be used, and a new module needs to be replaced. [0004] For the above prob...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R19/165
CPCG01R19/16571G01R31/2601G01R31/2607
Inventor 范晓坤刘文斌李洋贺小林孙丰涛
Owner GREE ELECTRIC APPLIANCES INC