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Method for preparing AZO transparent conductive thin film at room temperature

A transparent conductive film, room temperature technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve problems such as substrate heating, increase energy, reduce requirements, and avoid substrate deformation or even distortion. Effect

Inactive Publication Date: 2017-12-22
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to overcome the disadvantages of substrate heating or reducing atmosphere in the process of preparing AZO polycrystalline film by magnetron sputtering, and propose a magnetron sputtering method for preparing AZO at room temperature and inert gas Ar atmosphere Methods

Method used

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  • Method for preparing AZO transparent conductive thin film at room temperature
  • Method for preparing AZO transparent conductive thin film at room temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Place the cleaned glass slide in the chamber of the magnetron sputtering equipment, and evacuate the chamber of the magnetron sputtering equipment. When the back vacuum reaches 2×10 -3 Pa, start to pass into Ar, start to grow AZO polycrystalline film. The AZO sputtering conditions are: substrate temperature at room temperature, the chamber pressure is 0.1Pa by adjusting the flow rate of Ar and the size of the gas inlet, the target base distance is 110mm by adjusting the position of the target, and the power density of the RF power supply is 2.78W / cm 2 , sputtering time 1h, and then take out the glass slide on which the AZO polycrystalline film is deposited.

[0021] figure 1 and figure 2 Shown is the optical transmittance spectrum measured by the ultraviolet-visible-near-infrared spectrophotometer and the resistivity measured by the Hall effect tester of the AZO polycrystalline film obtained in this embodiment, and its parameter is that the resistivity is 2.29×10 ...

Embodiment 2

[0023] Place the cleaned glass slide in the chamber of the magnetron sputtering equipment, and evacuate the chamber of the magnetron sputtering equipment. When the back vacuum reaches 1.5×10 -3 Pa, pass into Ar, start to grow AZO polycrystalline film. The AZO sputtering conditions are: substrate temperature at room temperature, the chamber pressure is 0.1Pa by adjusting the flow rate of Ar and the size of the gas inlet, the target base distance is 130mm by adjusting the position of the target, and the RF power is 2.78W / cm 2 , sputtering time 1h, and then take out the glass slide on which the AZO polycrystalline film is deposited.

[0024] figure 2 Shown is that the Hall effect tester of the AZO polycrystalline thin film that present embodiment obtains measures, and its parameter is resistivity 3.78 * 10 –3 Ω·cm, the average light transmittance in the range of visible light is 90%.

Embodiment 3

[0026] Place the cleaned glass slide in the chamber of the magnetron sputtering equipment, and evacuate the chamber of the magnetron sputtering equipment. -3 Pa, pass into Ar, start to grow AZO polycrystalline film. The AZO sputtering conditions are: substrate temperature at room temperature, the chamber pressure is 0.1Pa by adjusting the flow rate of Ar and the size of the gas inlet, the target base distance is 150mm by adjusting the position of the target, and the RF power is 2.78W / cm 2 , sputtering time 1h, and then take out the glass slide on which the AZO polycrystalline film is deposited.

[0027] figure 2 Shown is the resistivity of the AZO polycrystalline film obtained in this embodiment measured by a Hall effect tester, and its parameter is that the resistivity is 5.24×10 –3 Ω·cm, the average light transmittance in the range of visible light is 90%.

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Abstract

The invention discloses a method for preparing AZO transparent conductive thin film at room temperature. A substrate is placed in a vacuum cavity of a magnetron sputtering device, the interior of the cavity is subject to vacuum supply, when the vacuum degree of the substrate reaches below 2*10<-3> Pa, Ar is led in, and an AZO polycrystalline film grows. The AZO polycrystalline film sputtering technology comprises the steps that an AZO ceramic target is adopted, Ar serves as the sputtering gas, the power source is the radio-frequency power source, the power density of the radio-frequency power source is 2.78 to 3.98 W / cm<2>, the sputtering pressure ranges from 0.05 Pa to 0.15 Pa, the sputtering time is one hour, and the adopted target-substrate distance ranges from 110 to 150 mm.

Description

technical field [0001] The invention relates to a method for preparing AZO polycrystalline film. Background technique [0002] Transparent semiconductor materials have good optical transparency and good electrical conductivity, and are usually obtained by heavy doping in wide-bandgap semiconductors, usually metal oxides. Among the transparent semiconductor materials, transparent conductive oxides (TCOs) are most commonly used. TCO is an important semiconductor material used in heat-reflective coating flat panel displays (FPDs), high-resolution televisions, touch screens, surface acoustic wave devices, light-emitting diodes, lasers, organic light-emitting diodes, organic light-emitting diode displays, transparent high-mobility thin-film transistors , nanostructure devices and spintronic devices, and some types of solar cells have broad application prospects. Commonly used transparent conductive films mainly include fluorine-doped tin dioxide (SnO 2 : F: FTO), Al-doped ZnO ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35
CPCC23C14/086C23C14/35
Inventor 李辉屈飞古宏伟王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI