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A metallized copper sputtering method for a ceramic substrate with holes

A ceramic substrate and metallization technology, which is applied in the field of metallized copper sputtering, can solve the problems of large hole depth, small hole diameter, and difficulty in attaching copper atoms to the inner wall of the hole, so as to increase sputtering time, increase bonding force, and increase The effect of chance

Active Publication Date: 2020-11-10
翔声科技(厦门)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For ceramic substrates with micro-deep holes, due to the small hole diameter and large hole depth, in the existing copper plating process, it is difficult for copper atoms to adhere to the inner wall of the hole during sputtering, and the metallization effect in the hole is not good.

Method used

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  • A metallized copper sputtering method for a ceramic substrate with holes
  • A metallized copper sputtering method for a ceramic substrate with holes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] The present embodiment provides a metallized copper sputtering method for a ceramic substrate with holes, which includes:

[0043] (1) Preheat the ceramic substrate with holes (thickness 0.5mm, aperture 75um) to be sputtered to 100°C;

[0044] (2) Put the preheated ceramic substrate with holes in the magnetron sputtering furnace and adjust the vacuum to 2*10 -3 ~3*10 - 3 MPa, maintain for 25min;

[0045] (3) Adjust the vacuum degree of the magnetron sputtering furnace to 6*10 -3 MPa with 28sccm argon gas;

[0046] (4) Sputtering titanium: the current of the inner target and the outer target are both 6A, and the sputtering time is 40min;

[0047] (5) Sputtering copper: the current of the inner target and the outer target are both 8A, and the sputtering time is 60min;

[0048] (6) Pass 500 sccm nitrogen into the magnetron sputtering furnace and cool for 10 minutes.

Embodiment 2

[0050] The present embodiment provides a method for metallizing copper sputtering on a ceramic substrate with holes, which includes:

[0051] (1) Preheat the ceramic substrate with holes (thickness 0.5mm, aperture 75um) to be sputtered to 100°C;

[0052] (2) Put the preheated ceramic substrate with holes in the magnetron sputtering furnace and adjust the vacuum to 2*10 -3 ~3*10 - 3 MPa, maintain for 25min;

[0053] (3) Adjust the vacuum degree of the magnetron sputtering furnace to 6*10 -3 MPa with 28sccm argon gas;

[0054] (4) Sputtering titanium: the current of the inner target and the outer target are both 6A, and the sputtering time is 40min;

[0055] (5) Sputtering copper: the current of the inner target is 6A, the current of the outer target is 8A, and the sputtering time is 60min;

[0056] (6) Pass 500 sccm nitrogen into the magnetron sputtering furnace and cool for 10 minutes.

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Abstract

The invention provides a metal copper sputtering coating method for ceramic substrate with holes, and relates to the technical field of ceramic base plate processing. The copper sputtering coating method is mainly used for the ceramic substrate with holes, wherein metal copper layers are arranged on the surface of the base plate and the inner walls of the holes. The metal copper sputtering coatingmethod comprises the following steps of: firstly, preheating the ceramic substrate with holes; then, performing magnetic-control sputtering, wherein sputtering is firstly performed to obtain a titanium layer, sputtering current is 5-6A, sputtering time is 35-45 minutes, sputtering is performed on the titanium layer to obtain a copper layer, sputtering current is 6-8A, and sputtering time is 55-70minutes; and finally, introducing nitrogen gas to cool to obtain the copper-coated ceramic substrate with holes. In a preheating process, binding force between a sputtering material and a base platecan be increased, sputtering current is reduced, sputtering time is increased, and the possibility of depositing titanium atoms and copper atoms in the holes of the substrate is increased, so that thecopper sputtering coating method refers to hole wall metalizing for tiny holes in the ceramic substrate.

Description

Technical field [0001] The invention relates to the technical field of ceramic substrate processing, and in particular to a metallized copper sputtering method for a ceramic substrate with holes. Background technique [0002] Ceramic substrates have the advantages of high resistance, outstanding high-frequency characteristics, high thermal conductivity, and good chemical stability. It has been widely used in high-power power semiconductor modules, semiconductor refrigerators, electronic heaters, power control circuits, and automotive electronics. , Solar panel components, laser and other fields. Ceramic substrates often need to be copper-plated before being processed into products such as LED heat sinks and ceramic circuit boards. The copper plating process is as follows: in a high vacuum state, a certain amount of argon is filled into the magnetron sputtering furnace, and a negative high voltage is applied to the furnace through the power control cabinet. The argon is ionized t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/02C23C14/58
CPCC23C14/02C23C14/025C23C14/185C23C14/352C23C14/58
Inventor 赵武彦郝涛彭荣根王腾毅吴术爱凌东夏后雨梁文海
Owner 翔声科技(厦门)有限公司