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Preparation method of high-reflectivity and high-purity X-ray multi-layer reflector and reflector

A high-reflectivity, multi-layer film technology, applied to coatings, mirrors, sputtering coatings, etc., can solve the problems of hindering applications, serious doping of backsputtering Ar atoms, and large quality, and achieve increased mean free path, Avoid the effects of spectral measurement distortion and doping reduction

Pending Publication Date: 2020-11-27
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high atomic number and high mass of palladium, the doping of backsputtered Ar atoms in palladium / boron carbide multilayer films prepared by the conventional Ar process is particularly severe, hindering its application in precision spectroscopic monochromation and measurement techniques

Method used

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  • Preparation method of high-reflectivity and high-purity X-ray multi-layer reflector and reflector
  • Preparation method of high-reflectivity and high-purity X-ray multi-layer reflector and reflector
  • Preparation method of high-reflectivity and high-purity X-ray multi-layer reflector and reflector

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Embodiment 1

[0036] Such as figure 1 As shown, the present embodiment provides a method for preparing a high-reflectivity and high-purity X-ray multilayer film mirror, comprising the following steps:

[0037] In step (1), the ultra-smooth single crystal silicon substrate is cleaned, the surface roughness of the substrate is 0.20 nanometers, the substrate is placed on the sample holder of the coating sputtering chamber, and the vacuum is drawn.

[0038] Step (2), when the vacuum reaches 9×10 -5 Pa, fill the sputtering vacuum chamber with high-purity krypton gas, the gas purity is 99.99%, and the flow rate of krypton gas is kept at 20 sccm. Remains steady with a 3% change.

[0039] Step (3), turn on the DC magnetron sputtering power supply, carry out the pre-sputtering of the palladium target material and the boron carbide target material, the plasma of krypton gas is generated on the surface of the target material, and the pre-sputtering time is 70 minutes to stabilize the plasma . The ...

Embodiment 2

[0044] In the preparation method of the high-reflectivity and high-purity X-ray multilayer film mirror provided in this embodiment, the sputtering power of the palladium target is 15W, and the sputtering power of the boron carbide target is 100W. All the other preparation processes are the same as in Example 1.

Embodiment 3

[0046] This embodiment provides an X-ray multilayer film mirror, which is obtained by the preparation method described in Embodiment 1. The multilayer film structure of the mirror obtained in this embodiment is a periodic multilayer film with the same film thickness for each period.

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Abstract

The invention relates to a preparation method of a high-reflectivity and high-purity X-ray multi-layer reflector and the reflector. The method includes the following steps that (1) a base plate is placed on a sample frame in a magnetron sputtering coating vacuum cavity, and the surface roughness of the base plate is lower than 0.3 nm; (2) after vacuum pumping is performed on the magnetron sputtering coating vacuum cavity, the vacuum cavity is filled with high-purity krypton which is used as the sputtering gas to adjust the working air pressure inside the magnetron sputtering coating vacuum cavity, the working air pressure is close to the lowest critical value of plasma stable starting, and in the working process, the krypton pressure change amplitude is lower than 5%; (3) a direct-currentmagnetron sputtering power supply is started, and pre-sputtering is performed on a palladium target material and a boron carbide target material; and (4) the sample frame containing the base plate iscontrolled to stay in the sputtering zones for the palladium target material and the boron carbide target material alternately, and preparation is completed. Compared with the prior art, the method has the advantages that the target material backwash effect can be reduced effectively, the film forming quality can be guaranteed, and the method is good in process repeatability, high in controllability and the like.

Description

technical field [0001] The invention belongs to the technical field of optical thin films, and relates to the preparation of a multilayer film reflector, in particular to a preparation method of a high-reflectivity and high-purity X-ray multilayer film reflector and the reflector. Background technique [0002] The nano-multilayer film with a one-dimensional crystal structure is based on the principle of Bragg reflection, which can theoretically achieve high-efficiency X-ray reflection, and is an important monochromatic element in the X-ray band. A conventional multilayer film is composed of an absorbing layer with a high atomic number and a spacer layer with a low atomic number. Component (ΔE / E=~10 -4 ) is two orders of magnitude larger, and can provide a photon flux more than 10 times higher than that of crystal elements while ensuring medium resolution. Therefore, multilayer film elements are the core elements of high-throughput X-ray optical systems, and are widely used...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/14G02B5/08
CPCC23C14/0635C23C14/14C23C14/352G02B5/0875
Inventor 黄秋实王占山齐润泽张众倪航剑
Owner TONGJI UNIV