Epitaxial layer structure of metal-oxide channel semiconductor field effect transistor

Abstract

The invention discloses an epitaxial layer structure of a metal-oxide channel semiconductor field effect transistor. The metal-oxide channel semiconductor field effect transistor is provided with an epitaxial layer structure, a gate, a substrate and a channel; a direction along the substrate towards the gate is defined as an extension direction; and the doping concentration of the epitaxial layerstructure is gradually increased and then gradually decreased in the extension direction. By virtue of the epitaxial layer structure, the voltage withstand performance of a metal-oxide channel semiconductor field effect transistor device can be improved, the on resistance can be lowered and reliability can be reinforced, so that the channel density of the metal-oxide channel semiconductor field effect transistor device is further improved and the unit cell dimension is reduced.

Description

technical field [0001] The invention belongs to the technical field of field effect transistors, in particular to an epitaxial layer structure of a metal-oxide channel semiconductor field effect transistor. Background technique [0002] A metal-oxide semiconductor field effect transistor is a field effect transistor that uses the effect of an electric field to control a semiconductor by using the gate of a metal layer across an oxide layer. It is widely used in analog circuits and digital circuits. With the advancement of semiconductor technology, high-density deep channel structures become possible, thereby further reducing the size of the device unit cell. In semiconductor processing, an epitaxial layer is a single crystal of silicon grown on a substrate. [0003] However, the single epitaxial layer or double epitaxial layer used in the trench MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) used in the past has been unable to maximize the optimization of the ch...

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Problems solved by technology

[0003] However, the single epitaxial layer or double epitaxial layer used in the trench MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) used in the past has been unable to maximize the optimization of the channel power MOSFET device as the channel becomes deeper and denser. Performance

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