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Distributed feedback semiconductor laser device and photo integrated transmitting chip module

A distributed feedback, semiconductor technology, applied in the field of optoelectronics, which can solve problems such as the decline of chip yield

Active Publication Date: 2018-01-09
CHANGZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will lead to a serious decline in the yield of multi-wavelength semiconductor laser array chips

Method used

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  • Distributed feedback semiconductor laser device and photo integrated transmitting chip module
  • Distributed feedback semiconductor laser device and photo integrated transmitting chip module
  • Distributed feedback semiconductor laser device and photo integrated transmitting chip module

Examples

Experimental program
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Effect test

Embodiment 1

[0032] This embodiment provides a distributed feedback semiconductor laser device, which is formed by connecting two chirped gratings in series through a gain region without a grating, or by connecting two sampling gratings with a sampling period chirped in series through a gain region without a grating ; The electrode of the first chirped grating is composed of three electrodes electrically isolated from each other, the corresponding part of the middle electrode of the grating is the phase shift adjustment area, and the corresponding part of the electrodes on both sides of the grating is the side area; the second chirped grating The corresponding part of the grating is a passive area without gain (such as figure 1 shown), or by a (such as figure 2 shown) or multiple (such as image 3 shown) electrode-controlled active region. The structure of the active region of the first chirped grating of the distributed feedback semiconductor laser of the present invention is as follow...

Embodiment 2

[0041] This embodiment provides a monolithic integrated array of distributed feedback semiconductor lasers, which is composed of the distributed feedback semiconductor laser device described in Embodiment 1.

[0042] This embodiment also provides a photonic integrated emission chip module (such as Figure 5 shown), the module consists of a laser monitor array, the above-mentioned distributed feedback semiconductor laser monolithic integrated array, a modulator array, a power equalizer array and a multiplexer, which are sequentially grown and integrated into formed on the same epitaxial wafer.

Embodiment 3

[0044] This embodiment adopts a manufacturing method of a distributed feedback semiconductor laser and an array thereof, the steps of which are as follows:

[0045] (1) Epitaxial n-type InP buffer layer, 100nm thick undoped lattice-matched InGaAsP lower confinement layer, strained InGaAsP multiple quantum wells and 100nm thick p-type lattice-matched InGaAsP upper confinement layer on n-type InP substrate material layer;

[0046] (2) The production method of the grating:

[0047] ①The manufacturing method of the linear chirped sampling grating, using the method of double-beam holographic interference to expose through the sampling photoresist, transfer the chirped sampling grating pattern to the photoresist on the upper confinement layer, and then perform material etching, A required chirped sampling grating structure is formed on the upper part of the upper confinement layer.

[0048] ②The manufacturing method of the linear chirped grating, using the method of high-precision...

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Abstract

The invention discloses a distributed feedback semiconductor laser device and a photo integrated transmitting chip module. The grating of the device is formed by two chirp gratings which are connectedin series through a no-grating gain region or formed by sampling gratings of sampling period chirps which are connected in series through the no-grating gain region. The electrode of the first chirpgrating is formed by three mutually electrically isolated electrodes, wherein the corresponding part of the intermediate electrode of the grating is a phase shift adjustment region, and the corresponding parts of the two side electrodes are side regions. The corresponding part of the second chirp grating is a no-gain passive region or an active region controlled by one or multiple electrodes. Thelasing wavelength of the laser can be continuously adjusted to meet the requirements of the ITU-T standard by changing the injection current of the side regions and the phase shift adjustment region or the proportion of the injection current; and when the structure of the second chirp grating is completely identical with that of the first grating, the lasing laser has better single mode characteristic and the linewidth is more narrow.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and relates to optical fiber communication, photon integration, photoelectric sensing and other photoelectric information processing. The invention relates to a distributed feedback type semiconductor laser device whose wavelength can be finely adjusted within a certain range and a manufacturing method thereof. Background technique [0002] As the core device of optical fiber communication system, distributed feedback (Distributed Feedback, DFB) semiconductor laser has attracted worldwide attention due to its small size and simple structure. The refractive index of ordinary uniform grating semiconductor laser is modulated periodically and uniformly. On both sides of the Bragg wavelength of this laser, there are two modes with the same resonator loss and the lowest symmetrically, which is called the degeneracy of the two modes. To obtain good single-mode behavior, a quarter-wavelength (λ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/0625H01S5/12
Inventor 周亚亭茆锐沈玉乔肖虹
Owner CHANGZHOU INST OF TECH
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