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Preparation method of cadmium selenide film material

A thin film material, cadmium selenide technology, applied in the field of preparation of cadmium selenide thin film materials, can solve the problems of thin film materials, low compound semiconductor properties, uncontrollable crystal nucleus growth and growth rate, etc., and achieve dislocation density low effect

Active Publication Date: 2018-01-19
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to prepare ideal and complex thin film materials by electrochemical deposition.
In addition, the growth and growth rate of crystal nuclei on the surface of the substrate cannot be controlled, and the properties of the obtained compound semiconductor are not high.

Method used

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  • Preparation method of cadmium selenide film material
  • Preparation method of cadmium selenide film material
  • Preparation method of cadmium selenide film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: a kind of preparation method of cadmium selenide film material, concrete steps are:

[0025] (1) Prepare InAs thin film materials on Si substrates by hot wall epitaxy;

[0026] (2) Put the selenium element and cadmium element into the inner growth tube, put the InAs thin film material obtained in step (1) into the quartz boat, and the quartz boat covers the nozzle of the inner growth tube, and put the inner growth tube and the quartz boat together Push it into the vacuum chamber, vacuumize, and pre-deposit selenium and cadmium on the InAs thin film material to obtain a CdSe buffer layer, wherein the molar ratio of selenium and cadmium is 1:9, and the vacuum degree in the vacuum chamber is 10 -2 The source temperature of Pa, selenium, and cadmium is 330°C, the pre-deposition temperature is 60°C, and the pre-deposition time is 20 min; the surface of the substrate InAs film material has a certain roughness, and the CdSe buffer layer can reduce the generation...

Embodiment 2

[0031] Embodiment 2: a kind of preparation method of cadmium selenide film material, concrete steps are:

[0032] (1) Prepare InAs thin film materials on Si substrates by hot wall epitaxy;

[0033] (2) Put the selenium element and cadmium element into the inner growth tube, put the InAs thin film material obtained in step (1) into the quartz boat, and the quartz boat covers the nozzle of the inner growth tube, and put the inner growth tube and the quartz boat together Push it into the vacuum chamber, vacuumize, and pre-deposit selenium and cadmium on the InAs thin film material to obtain a CdSe buffer layer, wherein the molar ratio of selenium and cadmium is 1:10, and the vacuum degree in the vacuum chamber is 10 -2.5 The source temperature at Pa, selenium, and cadmium is 340°C, the pre-deposition temperature is 61°C, and the pre-deposition time is 25 min; the surface of the substrate InAs film material has a certain roughness, and the CdSe buffer layer can reduce the generat...

Embodiment 3

[0039] Embodiment 3: a kind of preparation method of cadmium selenide film material, concrete steps are:

[0040] (1) Prepare InAs thin film materials on Si substrates by hot wall epitaxy;

[0041] (2) Put the selenium element and cadmium element into the inner growth tube, put the InAs thin film material obtained in step (1) into the quartz boat, and the quartz boat covers the nozzle of the inner growth tube, and put the inner growth tube and the quartz boat together Push it into the vacuum chamber, vacuumize, and pre-deposit selenium and cadmium on the InAs thin film material to obtain a CdSe buffer layer, wherein the molar ratio of selenium and cadmium is 1:11, and the vacuum degree in the vacuum chamber is 10 -3 The source temperature at Pa, selenium, and cadmium is 350°C, the pre-deposition temperature is 62°C, and the pre-deposition time is 30 min; the surface of the substrate InAs film material has a certain roughness, and the CdSe buffer layer can reduce the generatio...

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Abstract

The invention relates to a preparation method of a cadmium selenide film material, and belongs to the technical field of manufacturing of semiconductors. The preparation method comprises the followingsteps: preparing an InAs film material on a Si substrate; pre-depositing selenium and cadmium on the InAs film material under vacuum condition to obtain a CdSe buffering layer; depositing and growingselenium and cadmium on the CdSe buffering layer; and cooling to obtain a cadmium selenide film. The method for growing an II-VI group film on the III-V group substrate material is simple, small in requirements on instruments and equipment, low in cost, and easy to operate; and the cadmium selenide film prepared by the method is flat and uniform in surface.

Description

technical field [0001] The invention relates to a preparation method of a cadmium selenide film material, belonging to the technical field of semiconductor manufacturing. Background technique [0002] Hg 1-x Cd x Se and Hg 1-x Cd x Te has similar performance, adjustable band gap, and can absorb infrared radiation of any wavelength. Its electronic effective mass is small, and the intrinsic carrier concentration is low. The detector made of it can have the advantages of low noise, high detection rate, short response time and wide response frequency. It is a powerful third-generation infrared detector. potential material. Appropriate substrate materials are the key to growing third-generation infrared detector materials. [0003] to Hg 1-x Cd x For Se materials, the III-V binary semiconductor material indium arsenide (InAs) and the II-VI binary semiconductor material cadmium selenide (CdSe) can be used as Hg 1-x Cd x Substrate material for Se growth. Hg 1-x Cd x Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/02C30B29/48C30B25/18
Inventor 刘翔何利利张明吴长树
Owner KUNMING UNIV OF SCI & TECH
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