S-wave band narrowband filter power amplifier module

A power amplifier module and narrow-band filtering technology, applied in power amplifiers, improved amplifiers to reduce temperature/power supply voltage changes, etc., can solve the problems of many components and complex circuits, and achieve good compatibility, small device volume, and reliability high effect

Inactive Publication Date: 2018-01-30
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many researches on the filter power amplifier circuit, such as the bandpass filter amplifier circuit designed and realized in the patent CN104993806A, but there are problems such as complex circuit and many components

Method used

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  • S-wave band narrowband filter power amplifier module
  • S-wave band narrowband filter power amplifier module
  • S-wave band narrowband filter power amplifier module

Examples

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Embodiment Construction

[0010] like figure 1 , 2 As shown, the present invention includes a power amplifier chip WFD, an input port P1, an output port P2, a WFD control port P3, a power amplifier chip WFD input terminal Rin, a power amplifier chip WFD output terminal Rout, a connecting column H1, a filter F, and a filter F includes: ground port GND1, ground port GND2, connection post H2, connection post H3, connection post H4, connection post H5, input inductance Lin, first strip line M11 of the first step resonant impedance unit, first step resonant impedance The second stripline M12 of the unit, the first stripline M21 of the second ladder resonant impedance unit, the second stripline M22 of the second ladder resonance impedance unit, and the first stripline M31 of the third ladder resonance impedance unit , the second stripline M32 of the third ladder resonance impedance unit, the first stripline M41 of the fourth ladder resonance impedance unit, the second stripline M42 of the fourth ladder reso...

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PUM

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Abstract

The invention discloses an S-wave band narrowband filter power amplifying module. A miniature filter wave amplifying module is obtained by combining a power amplifying chip WFD with a wave filter based on a low temperature co-firing ceramic technology. A banded line structure is adopted by the wave filter, an inductance, a capacitance and a Z-shaped coupling line in the wave filter are located inone plane respectively, and the process is completed by sintering at 900 degree using the low temperature co-firing ceramic technology. According to the S-wave band narrowband filter power amplifyingmodule, the multilayer wiring layer is achieved, the assembling density is effectively improved, the yield of finished products is high, the performance is superior, the production cycle is short, andthe cost is low; the power amplifying module has good high-frequency transmission characteristics and good compatibility, hybrid multi-layer substrate and hybrid multi-chip components with higher assembly density and higher performance can be achieved, the power amplifying module is high in reliability, small in size, light in weight, high in temperature and humidity, and is applicable to the fields of microwave communications and radar.

Description

technical field [0001] The invention belongs to the field of microwave radio frequency, in particular to an S-band narrowband filter power amplification module. Background technique [0002] In the past ten years, wireless communication technology has become the fastest-growing technology in microelectronic devices and information industries, and has higher requirements for power consumption, performance, size, and cost of related devices, which has also promoted the development of many technologies. Invent and improve. Multi-layer low-temperature co-fired ceramic technology can meet such requirements to the greatest extent, and can combine active devices with passive devices to achieve the purpose of module reduction. The main indicators describing the performance of this component are: passband operating frequency range, center frequency, temperature stability, volume, weight, reliability, etc. [0003] There are many studies on filter power amplifier circuits, such as t...

Claims

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Application Information

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IPC IPC(8): H03F3/20H03F1/30
Inventor 张亚君王鑫戴永胜
Owner NANJING UNIV OF SCI & TECH
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