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Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot

一种制造方法、容器的技术，应用在化学仪器和方法、晶体生长、自凝固法等方向，能够解决太阳能电池光电转换效率损害等问题，达到提高效率、提高质量、减少杂质量的效果

Inactive Publication Date: 2018-02-06
AUO CRYSTAL
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Photoelectric conversion efficiency of solar cells fabricated using crystalline silicon ingots with high concentrations of impurities will be compromised

Method used

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  • Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot
  • Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot
  • Container for silicon ingot fabrication and manufacturing method thereof, and method for manufacturing crystalline silicon ingot

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Embodiment Construction

[0040] The present invention will be described more fully with reference to the accompanying drawings of this embodiment. However, the present invention can also be embodied in various forms and should not be limited to the embodiments described herein. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity. The same or similar reference numerals represent the same or similar elements, and the following paragraphs will not repeat them.

[0041] figure 1 is a schematic diagram of a crystalline silicon ingot growth system according to an embodiment of the present invention. Please refer to figure 1 A crystalline silicon ingot growing system includes a container 100 , a crystalline silicon ingot 200 and a heat source 300 . The container 100 includes an inner surface 100a and an outer surface 100b. The crystalline silicon ingot 200 is housed in the container 100 and formed on the inner surface 100 a of the container 100 . The heat source 300 is...

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Abstract

A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to atemperature of 1000 DEG C. to 1700 DEG C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layerincludes silicon oxynitride represented by SixNyOz, 1=<x=<2, 1=<y=<2, and 0.1=<z=<1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.

Description

technical field [0001] The present invention relates to a container and its manufacturing method, and in particular to a container for manufacturing silicon ingots and its manufacturing method. Background technique [0002] A crystalline silicon wafer used in a conventional crystalline silicon solar cell is usually formed by cutting a crystalline silicon ingot. The crystalline silicon ingot can be obtained by heating the silicon material in the container to obtain silicon melt. Thereafter, the silicon melt is cooled and condensed to form a crystalline silicon ingot. However, during heating, the molecules in the container diffuse into the crystalline silicon ingot, resulting in a high concentration of impurities in the crystalline silicon ingot. The photoelectric conversion efficiency of solar cells manufactured using crystalline silicon ingots with high concentrations of impurities will suffer. Therefore, how to reduce the impurities produced in the process of manufacturi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
CPCC01B33/021C30B11/002C30B29/06C30B15/10C30B15/18C30B29/68C30B11/003
Inventor 余昌和陈彦铭
Owner AUO CRYSTAL
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