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Transient voltage suppressor and manufacturing method therefor

A technology of transient voltage suppression and manufacturing method, which is applied in the direction of semiconductor/solid-state device parts, circuits, electrical components, etc., and can solve the problems of multi-channel TVS device application field limitations, multiple chips cannot be packaged at the same time, and increase the overall size, etc. , to achieve stable product parameters and performance, high chip area utilization, and reduce processing difficulty

Pending Publication Date: 2018-02-16
BEIJING YANDONG MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the TVS device obtained by this method requires more than two groups of chips to be packaged in parallel, and two chips need to be placed on one of the substrates, which increases the possibility of packaging defects and increases the cost of packaging.
And because the integrated packaging of multiple chips requires more space and increases the overall size, for smaller packages, multiple groups of chips cannot be packaged at the same time
[0005] In order to realize multi-channel TVS devices, the prior art usually arranges a plurality of traditional single-junction diodes into multi-channels. Although this method has a simple structure and is easy to implement, due to the large capacitance inside the circuit, the Applications of multi-channel TVS devices are limited

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  • Transient voltage suppressor and manufacturing method therefor
  • Transient voltage suppressor and manufacturing method therefor
  • Transient voltage suppressor and manufacturing method therefor

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Embodiment Construction

[0028] The present invention is described below based on examples, but the present invention is not limited to these examples. In the following detailed description of the embodiments of the present invention, some specific details are described in detail, and those skilled in the art can fully understand the present invention without the description of these details. In order to avoid obscuring the essence of the present invention, well-known methods, procedures, and flow charts are not described in detail.

[0029] In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown in the drawings. The flowcharts and block diagrams in the accompanying drawings illustrate the possible system framework, functions and operations of the systems, methods, and devices of the embodiments of the present invention, and the blocks an...

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Abstract

The invention discloses a transient voltage suppressor and a manufacturing method therefor. The transient voltage suppressor comprises a first doping type semiconductor substrate, a first doping typefirst epitaxial layer positioned on the surface of the semiconductor substrate, a second doping type buried layer positioned in the epitaxial layer, a first doping type second epitaxial layer positioned on the first epitaxial layer, a second doping type first isolation region and a first doping type second isolation region which extend from the surface of the second epitaxial layer to the buried layer and the second epitaxial layer respectively, and first doping type first doping regions and second doping type second doping regions which are positioned in respective first isolation islands andsecond isolation islands and extend from the surface of the epitaxial surface to the second epitaxial layer respectively, wherein the first isolation region and the second isolation region are used for forming multiple first isolation islands and second isolation islands in the second epitaxial layer respectively; and each first doping region and the corresponding second doping region are electrically connected to form multiple signal channels.

Description

technical field [0001] The present invention relates to the technical field of semiconductor microelectronics, and more specifically, to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] A transient voltage suppressor (Transient Voltage Suppressor, TVS) is a high-efficiency circuit protection device that is commonly used at present. Its shape is the same as that of an ordinary diode, but because of its special structure and process design, it can absorb up to several thousand watts of surge power. The working mechanism of the TVS device is that under reverse application conditions, when subjected to a high-energy large pulse, its working impedance will quickly drop to an extremely low conduction value, thereby allowing a large current to flow while clamping the voltage at a predetermined value. level, the general response time is only 10 -12 seconds, so it can effectively protect the precision components in the electronic circ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06
CPCH01L23/62H01L29/0603H01L29/0615H01L29/0684
Inventor 周源郭艳华李明宇张欣慰
Owner BEIJING YANDONG MICROELECTRONICS
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