32results about How to "Has the advantage of industrialization" patented technology

The invention discloses a fluorescent reagent for detecting specificity of aluminium ions based on an aggregation-induced emission principle. The fluorescent reagent is represented as sodium4-(2, 5-diphenyl-1H-pyrrole-1-yl)benzoate (TriPP-COONa). The fluorescent reagent has fluorescence enhancement specific response to the aluminium ions, has the detection limit of 1 mu M (27 mu g/ L) which is lower than the aluminium ion concentration (no higher than 200 mu g/ L) in drinking water stipulated by the World Health Organization, is free of the interference of other ions, such as K+, Mg2+, Ca2+, Ba2+, Ni2+, and has short response time. The fluorescence intensity of the fluorescent reagent has good linear relationship within the aluminium ion concentration range of 1 mu M to 11 mu M. According to the linear equation in the invention, the quantitive detection of the concentration of aluminium ions in the water sample can be realized conveniently and rapidly.

The invention discloses a password input method based on a touch screen, and a touch terminal. The password input method includes the steps of firstly, obtaining touch information of the touch screen through a password controller when a user inputs a password through the touch screen; secondly, obtaining password information through the password controller according to the touch information; thirdly, sending the password information to an upper computer system through the password controller. According to the password input method based on the touch screen, by adding the password controller which is completely independent of a central processing unit, the password is inputted and transmitted through the special password controller, interference and processing which are conducted on the password information through the central processing unit are completely avoided, the password information is prevented from being obtained by a fake program through the central processing unit and a memorizer, the risk that the password is revealed is eliminated, and security of the password inputted through the touch screen is improved. Meanwhile, the universal touch screen can be used in the method instead of a special touch screen, and therefore implementation cost is low, and the industrial advantages are achieved.

The invention relates to a method for extracting esculetin from herba violae. The method comprises the following steps: using herba violae as a raw material to grind, adding 7-15 times of 60-90% ethanol to perform backflow extraction for 2-3 times; filtering, recycling ethanol under reduced pressure, diluting the concentrated solution with hot water; adding macroporous resin for adsorption; washing resin column with water to ensure that the solution has no caramel colour; using 4-6 BV of 50-80% ethanol to elute the active ingredient, recycling ethanol from eluent; adjusting the acidity of the hot solution for precipitation, filtering out the precipitate, dissolving the precipitate with ethyl acetate through refluxing; adding the solution in an aluminum peroxide column, recycling the obtained solution in a small-column container, and standing for crystallization; dissolving the obtained crystals with ethanol to perform refluxing and recrystallization; and drying the obtained crystals to obtain the esculetin product. By adopting the method to produce esculetin, the technology is simple, is easy to operate, has low production cost and high product purity.

The invention discloses a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor comprises a first doping type of semiconductor substrate, a first doping type of first epitaxial layer, a first doping type of second epitaxial layer, a plurality of first doping regions and a plurality of second doping regions, wherein the second epitaxial layer is arrangedon a first surface of the semiconductor substrate and covers the first epitaxial layer, the plurality of first doping regions are formed in the semiconductor substrate, each second doping region is formed in the second epitaxial layer or penetrates through the second epitaxial layer and is connected with the corresponding first doping region, the plurality of first doping regions, the plurality ofsecond doping regions, the semiconductor substrate and the second epitaxial layer are used for forming a bidirectional suppression circuit, and the bidirectional suppression circuit comprises a firstrectification diode, a second rectification diode, a first transient suppression diode and a second transient suppression diode. The transient voltage suppressor provided by the invention has a bidirectional voltage suppression function, is low in capacitance and small in volume and is simple to fabricate, and electrodes are respectively led out of a front surface and a back surface.

The invention discloses a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor includes: a semiconductor substrate; an epitaxial layer arranged on a firstsurface of the semiconductor substrate; a first buried layer and a second buried layer, wherein a first part of the first buried layer and the second buried layer form a first transient voltage suppressing tube, a second part of the first buried layer and the semiconductor substrate from a second transient voltage suppressing tube, and the first part and the second part of the first buried layer are not connected with each other; a plurality of isolation areas extending from a surface of the epitaxial layer to the interior of the first buried layer or the second buried layer; a plurality of well regions extending from the surface of the epitaxial layer to the interior of the epitaxial layer, wherein the first part of the first buried layer and the semiconductor substrate form a PN junction, and the first part of the first buried layer and the semiconductor are electrically connected so as to allow short out of the PN junction. The transient voltage suppressor has a bidirectional transient voltage suppressing function, is low in capacitance, is small in size, is easy to manufacture, and can lead electrodes from a front surface and a back surface.

The invention relates to a processing method of recycled illegal cooking oil, which comprises the following steps of: firstly, filtering impurities of collected illegal cooking oil, swilling oil and waste oil and depickling the collected illegal cooking oil, swilling oil and waste oil, then placing the collected illegal cooking oil, swilling oil and waste oil in an agitated reactor, adding 3-6% of carclazyte and 0.5-1.5% of phosphoric acid, mixing, heating and uniformly stirring, heating the uniformly stirred materials, naturally cooling to 34 DEG C-37 DEG C after settling and decomposing, filtering to obtain liquid oil and semi-solid carclazyte after settling and splitting phase, wherein the acid value of oil of the illegal cooking oil, swilling oil and waste oil is reduced from 3.5mg/koh/g to 0.9-1.4mg/koh/g, drying or naturally drying the semi-solid carclazyte in air, then placing the liquid oil and the semi-solid carclazyte in the agitated reactor, adding 3% of cation expression activity emulsifying agent, stirring at high speed for 20-50 minutes at the temperature of 50 DEG C-80 DEG C to enable fatty acid and triglyceride to be micro-emulsified, then adding 0.1% of ionic catalysis stabilizing agent, under the condition of 100-150Mpa pressure, and finally pumping hydrogen for 15-25 minutes by 0.5 per cubic meter per second to obtain biomass fuel. The processing method has the advantages of simple process, low cost, little energy consumption and high efficiency.

The invention provides a humidity-interference-resistant super-hydrophobic fabric-based pressure sensor and a preparation method thereof. The preparation method comprises the following steps: dipping fabric in an alkaline solution to increase active groups on the surface of the fabric; then dipping the fabric in a conductive material solution to obtain conductive fabric; and dipping the conductive fabric in the super-hydrophobic nano metal oxide particle dispersion liquid to form a super-hydrophobic nano metal oxide layer on the surface of the conductive fabric, and connecting an electrode to the surface of the conductive fabric to obtain the super-hydrophobic fabric-based pressure sensor. Through the super-hydrophobic nanoscale metal oxide layer, the conductive layer of the fabric-based pressure sensor can be fully protected from humidity interference on the basis of not reducing the conductivity and the sensing sensitivity of the sensor, so that the sensing stability of the fabric-based pressure sensor in different use environments is improved.

The invention discloses a transient voltage suppressor and a manufacturing method therefor. The transient voltage suppressor comprises a semiconductor substrate; a first epitaxial layer located on the first surface of the semiconductor substrate; a buried layer located in the epitaxial layer; a second epitaxial layer located on the first epitaxial layer; a first isolating region and a second isolating region which respectively extend from the surface of the second epitaxial layer to the interior of the buried layer and the interior of the second epitaxial layer, wherein the first and second isolating regions are respectively used for forming a first active region and a second active region in the second epitaxial layer; a first doping region and a second doping region, which are respectively located in the first active region and the second active region and extend to the interior of the second epitaxial layer from the surface of the epitaxial layer, wherein the first and second doping regions are in electrical connection. The doping type of the substrate is the same as the doping type of the epitaxial layer. The transient voltage suppressor enables a power device which occupies a large area to be made in a core, improves the utilization rate of the area of the chip and the integration degree, further reduces the size of the chip, and reduces the packaging cost.

The invention discloses a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor includes: a semiconductor substrate; an epitaxial layer arranged on a firstsurface of the semiconductor substrate; a first buried layer extending from the first surface of the semiconductor substrate to the interior of the semiconductor substrate, wherein the first buried layer and the semiconductor substrate from a PN junction; a second buried layer, wherein a part of the second buried layer and a part of the first buried layer from a first transient voltage suppressingtube; a plurality of isolation areas extending from a surface of the epitaxial layer to the interior of the first buried layer or the second buried layer; a plurality of well regions extending from the surface of the epitaxial layer to the interior of the epitaxial layer, wherein at least one of the plurality of well regions contacts the corresponding isolation area so as to form a second transient voltage suppressing tube, and at least part of the first buried layer and the semiconductor substrate are electrically connected so as to allow short out of the PN junction. The transient voltage suppressor has a bidirectional transient voltage suppressing function, is low in capacitance, is small in size, is easy to manufacture, and can lead electrodes from a front surface and a back surface.

The invention relates to a method for preparing dodecyl methyl sulfoxide. The method comprises two parts namely chemical synthesis as well as separation and purification of dodecyl methyl sulfoxide: performing single methylation on n-dodecanethiol through a methylation reagent, and performing selective oxidation on the intermediate product n-dodecyl methyl sulfide through an oxidizing agent to obtain dodecyl methyl sulfoxide; performing methylation reaction on n-dodecanethiol, performing preliminary purification on n-dodecanethiol, performing suction filtration to remove solid potassium carbonate, extracting the filtrate through ethyl acetate, adjusting the pH to be neutral, adding saturate saline solution to wash an organic phase, adopting anhydrous sodium sulfate or anhydrous magnesium sulfate for water absorption and drying, performing suction filtration to remove solid, and performing distillation to remove ethyl acetate so as to obtain a n-dodecyl methyl sulfide crude product. According to the invention, the methylation reagent which is environment-friendly, low in price and toxicity is selected to replace iodomethane, the oxidizing agent which is environment-friendly and excellent in oxidation selectivity for n-dodecyl methyl sulfide is selected to replace sodium periodate, and the technological conditions are controlled and researched, so that the method for preparing dodecyl methyl sulfoxide is environment-friendly.

The invention discloses a transient voltage suppressor and a manufacturing method therefor. The transient voltage suppressor comprises a first doping type semiconductor substrate, a first doping typefirst epitaxial layer positioned on the surface of the semiconductor substrate, a second doping type buried layer positioned in the epitaxial layer, a first doping type second epitaxial layer positioned on the first epitaxial layer, a second doping type first isolation region and a first doping type second isolation region which extend from the surface of the second epitaxial layer to the buried layer and the second epitaxial layer respectively, and first doping type first doping regions and second doping type second doping regions which are positioned in respective first isolation islands andsecond isolation islands and extend from the surface of the epitaxial surface to the second epitaxial layer respectively, wherein the first isolation region and the second isolation region are used for forming multiple first isolation islands and second isolation islands in the second epitaxial layer respectively; and each first doping region and the corresponding second doping region are electrically connected to form multiple signal channels.

The invention discloses a preparation method of a metal ion coordination capture adsorption enhanced mask main body material. The preparation method comprises the following steps: stirring and mixing glycerol, sodium polyacrylate and dihydroxyaluminum aminoacetate to obtain a component A; stirring and mixing distilled water, tartaric acid and disodium ethylene diamine tetraacetate to obtain a component B; fully mixing the component A and the component B to obtain hydrogel; and finally, modifying a non-woven fabric by using the hydrogel, and drying to obtain the metal ion coordination capture adsorption enhanced mask main body material. Through the mode, coordination bonds of aluminum ions and carboxyl in the hydrogel can form a capture and adsorption effect, so that the blocking and protecting capability of a common mask material on pollutants is further improved; moreover, along with the prolonging of the service time of the mask, the water is continuously accumulated, so that the hydrogel is further promoted to release more aluminum ions and carboxyl groups, the attenuation degree of the filtering efficiency of the mask is obviously slowed down, and relatively high filtering efficiency is still kept, thereby prolonging the service life of a common disposable mask.

The invention provides polypeptides for promoting a swine body to generate an African swine fever virus (ASFV) antigen-specific immune response and application of the polypeptides, and belongs to thetechnical field of biological medicines. The polypeptides comprises one or more of a first polypeptide, a second polypeptide, a third polypeptide, a fourth polypeptide and a fifth polypeptide; the amino acid sequence of the first polypeptide, the amino acid sequence of the second polypeptide, the amino acid sequence of the third polypeptide, the amino acid sequence of the fourth polypeptide and the amino acid sequence of the fifth polypeptide are as shown by SEQ ID NO.1-SEQ ID NO.5 respectively. The polypeptides provided by the invention can obviously promote the proliferation of ASFV sensitized immune cells, and can promote the swine body to generate the ASFV antigen-specific immune response by promoting swine mononuclear macrophages and B and T lymphocytes to secrete interferon-gamma (IFN-gamma). After an animal is immunized, the immune response of the swine pig body can be remarkably promoted. The polypeptides or a polypeptide polymer obtained by polymerization of the polypeptides can be used for preparing subunit vaccines of the African swine fever virus.

The invention belongs to the technical field of engineering plastics, and particularly relates to a low-floating-fiber polyformaldehyde composition and a preparation method thereof. The low floating fiber polyformaldehyde composition is prepared from the following raw materials in percentage by weight: 39.8 to 83.7 weight percent of polyformaldehyde, 1 to 15 weight percent of maleic anhydride grafted ultrahigh molecular weight polypropylene, 15 to 40 weight percent of glass fiber, 0.1 to 1 weight percent of antioxidant, 0.1 to 1.2 weight percent of compatilizer and 0.1 to 3 weight percent of plasticizer. The low-floating-fiber polyformaldehyde composition is good in surface, low in floating fiber, excellent in mechanical property and good in wear resistance, the adopted process is simple and effective, the production cost is low, and the low-floating-fiber polyformaldehyde composition has industrial advantages and practical value.

The invention discloses a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor includes: a semiconductor substrate and a second epitaxial layer arranged ona first surface of the semiconductor substrate; a first buried layer extending to the semiconductor substrate; a second buried layer, wherein a first part of the second buried layer extends to the semiconductor substrate, and the second part of the second buried layer extends to the first buried layer; a first isolation region extending to the second epitaxial layer so as to limit a first isolation island and a second isolation island; a second isolation region extending to the second epitaxial layer, wherein a first part of the second isolation region limits a third isolation island in the first isolation island, and a second part of the second isolation region is connected to the first part of the second buried layer; a first well region, wherein a part of the first well region extendsto the third isolation island, and the other part of the first well region is connected to the first buried layer through the first isolation region; and a second well region extending to the second isolation island, and electrically connected to the first part of the first well region. The transient voltage suppressor has a bidirectional transient voltage suppressing function, is low in capacitance, is small in size, is easy to manufacture, and can lead electrodes from a front surface and a back surface.

The invention provides a preparation method of an activated carbon fiber felt, and particularly relates to a preparation method of a phenolic aldehyde-based activated carbon fiber felt. The preparation method comprises the following steps: carrying out melt spinning on thermoplastic phenolic resin to prepare thermoplastic phenolic fibers, further preparing a thermoplastic phenolic fiber felt, then carrying out pre-oxidation, carrying out low-temperature carbonization and high-temperature carbonization, and finally, carrying out activation. The phenolic aldehyde-based activated carbon fiber felt adopts thermoplastic phenolic resin as a raw material, is wide in source and low in price, and the manufacturing cost increase caused by the two-step carbonization process is far lower than that of a thermosetting phenolic fiber manufacturing scheme, so that the phenolic aldehyde-based activated carbon fiber felt has more industrialization advantages.