Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Vacuum arc film forming device and film forming method

A film forming device and vacuum arc technology, applied in vacuum evaporation plating, circuits, discharge tubes, etc., can solve problems such as the reduction of film uniformity, and achieve the effects of suppressing particle generation and dense corrosion resistance.

Active Publication Date: 2020-03-20
CANON ANELVA CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The uniformity of the film will be reduced when this particle is attached to the substrate surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vacuum arc film forming device and film forming method
  • Vacuum arc film forming device and film forming method
  • Vacuum arc film forming device and film forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. However, the constituent requirements described in this embodiment are merely examples. The technical scope of the present invention is defined by the scope of claims, and is not limited by the following individual examples. Hereinafter, an embodiment in which the film-forming apparatus of the present invention is applied to a film-forming apparatus for forming a ta-C film on a substrate as an object to be processed by a vacuum arc deposition method (Vacuum Arc Deposition) will be described.

[0025] First, use Figures 1 to 5 A vacuum processing apparatus according to an embodiment of the present invention will be described. figure 1 It is a plan view showing the vacuum processing apparatus related to this embodiment. The vacuum processing device of this embodiment is a serial film forming device. The vacuum processing apparatus of this embodiment...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A vacuum arc film forming apparatus for forming a ta-C film on a substrate by arc discharge includes: a holding unit that holds a target portion; an anode portion into which electrons discharged from the target portion flow; and a power source that operates at A current that generates plasma through arc discharge is supplied between the target portion and the anode portion; wherein, during the arc discharge, the current supplied by the power supply is superimposed on a DC current with a pulse frequency not higher than 140 Hz The current of the pulse current.

Description

technical field [0001] The present invention relates to a vacuum arc film forming device and a film forming method for a protective layer, in particular to a vacuum arc film forming device and a film forming method for a surface protective layer suitable for forming a surface protective layer of a magnetic recording medium. Background technique [0002] DLC (diamond-like carbon) is suitable for the surface protective layer, and a protective layer formed by a sputtering method, a chemical vapor deposition method (CVD method), or the like is applied. The narrowing of the magnetic gap between the magnetic recording layer and the magnetic head can increase the recording density, so the thinning of the surface protective layer is required. Therefore, a protective film that satisfies durability even with an extremely thin film is required, and as a surface protective layer, the use of a ta-C (tetrahedral amorphous carbon) film that is superior in durability and corrosion resistanc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/32C23C14/00C23C14/06C23C14/24G11B5/84
CPCC23C14/0605C23C14/0611C23C14/325C23C14/568G11B5/8408H01J37/32055H01J37/32064
Inventor 药师神弘士渡边勇人芝本雅弘三浦让
Owner CANON ANELVA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com