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Germanium selenide thin film and preparation method thereof

A germanium selenide, thin film technology, applied in the direction of electrolytic inorganic material coating, etc., can solve the problems of unresponsiveness and scarcity of semiconductor materials.

Active Publication Date: 2018-02-27
成都阿尔法金属材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even if rare earth materials have absorption in near-infrared light, most of them are narrow-band absorption, and cannot respond to near-infrared light in all bands.
Therefore, the development of a new type of semiconductor material with broadband absorption and conversion capabilities in the near-infrared region can solve the above problems, but semiconductor materials that can meet this condition are very rare

Method used

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  • Germanium selenide thin film and preparation method thereof
  • Germanium selenide thin film and preparation method thereof
  • Germanium selenide thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A kind of germanium selenide film preparation method, the steps are as follows:

[0032] 1) Weigh 10 mg of GeSe powder into 30 mL of ethanol solution, and ultrasonically vibrate for 5 min using an ultrasonic cleaner to form a dark brown suspension.

[0033] 2) Pour the suspension evenly into two centrifuge tubes, put it into a centrifuge and centrifuge for 7min, the speed of the centrifuge is 2000r / min, 3000r / min, 4000r / min, 5000r / min, 6000r / min, centrifuge Then take the supernatant in a 50mL beaker.

[0034] 3) Weigh 3 mg of iodine powder and add it to the supernatant liquid obtained by centrifugation, and then ultrasonically shake for 5 minutes to fully disperse the iodine powder particles in ethanol and positively charge the GeSe particles.

[0035] 4) Connect the ITO substrate on which the GeSe film needs to be deposited to the negative pole of the DC stabilized power supply, connect the metal titanium sheet to the positive pole of the DC stabilized power supply, a...

Embodiment 2

[0039] A method for preparing a germanium selenide thin film, the steps are as follows:

[0040] 1) Weigh 20 mg of GeSe powder into 60 mL of ethanol solution, and ultrasonically vibrate for 7 minutes using an ultrasonic cleaner to form a dark brown suspension.

[0041] 2) Pour the suspension evenly into two centrifuge tubes, put it into a centrifuge and centrifuge for 7min, the speed of the centrifuge is 2000r / min, 3000r / min, 4000r / min, 5000r / min, 6000r / min, centrifuge Then take the supernatant in a 50mL beaker.

[0042] 3) Weigh 6 mg of iodine powder and add it to the supernatant obtained by centrifugation, and then ultrasonically shake for 7 minutes to fully disperse the iodine powder particles in ethanol and positively charge the GeSe particles.

[0043] 4) Connect the ITO substrate on which the GeSe film needs to be deposited to the negative pole of the DC stabilized power supply, connect the metal titanium sheet to the positive pole of the DC stabilized power supply, and...

Embodiment 3

[0047] A method for preparing a germanium selenide thin film, the steps are as follows:

[0048] Weigh 30 mg of GeSe powder into 100 mL of ethanol solution, and ultrasonically shake for 7 min using an ultrasonic cleaner to form a dark brown suspension.

[0049]2) Pour the suspension into two centrifuge tubes evenly, put it into a centrifuge and centrifuge for 10 minutes, the speed of the centrifuge is 2000r / min, 3000r / min, 4000r / min, 5000r / min, 6000r / min, centrifuge Then take the supernatant in a 50mL beaker.

[0050] 3) Weigh 10 mg of iodine powder and add it to the supernatant obtained by centrifugation, and then ultrasonically vibrate for 10 minutes to fully disperse the iodine powder particles in ethanol and positively charge the GeSe particles.

[0051] 4) Connect the ITO substrate on which the GeSe film needs to be deposited to the negative pole of the DC stabilized power supply, connect the metal titanium sheet to the positive pole of the DC stabilized power supply, an...

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Abstract

The invention relates to the technical field of thin film preparation, in particular to a germanium selenide thin film and a preparation method thereof. The germanium selenide thin film is deposited on an ITO substrate through an electrochemical method. According to the preparation method of the germanium selenide thin film, the germanium selenide thin film is deposited on the conductive side faceof ITO, specifically, GeSe powder is put into an ethanol solution or an acetone solution, and thus a dark brown suspension is formed; and then, starch is added into centrifugal supernatant of the suspension, a power source is switched on, a reaction is conducted, and thus the germanium selenide thin film is obtained. By adopting the preparation method, simpleness is achieved, and the germanium selenide thin film capable of expanding germanium selenide application can be prepared.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a germanium selenide thin film and a preparation method thereof. Background technique [0002] Many semiconductor materials, such as titanium oxide, cuprous oxide, bismuth iodide oxide, etc., have no response in the near-infrared region because of their large band gaps. Devices made of a single semiconductor material can only produce photoelectricity in the visible region. or images. In response to this problem, Saxena et al. proposed the idea of ​​using the up-conversion optical properties of rare earth ion doping to convert near-infrared light into visible light and then be absorbed by semiconductor materials. [0003] So far, the research around this idea has focused on placing the prepared up-conversion nanomaterials on the back substrate of amorphous silicon solar cells, or adding them to the inside of sensitized solar cells, or combining them with organic sol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D9/04
CPCC25D9/04
Inventor 贾红李晨李歧郑浩然刘中利靳瑞敏
Owner 成都阿尔法金属材料有限公司
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