A chemical dopant and doping method for stably doping graphene

A chemical doping and graphene technology, applied in the field of graphene, can solve the problems of poor doping stability and achieve the effect of avoiding pollution and promoting doping effect

Active Publication Date: 2020-07-10
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, existing high-efficiency chemical dopants suffer from poor doping stability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The metal copper foil is used as the initial substrate, and the polyethylene terephthalate film is used as the transparent target substrate, and the method of thermocompression bonding is adopted. Graphene is grown on the metal copper foil (in this embodiment, the metal copper foil can be replaced with copper sheets or copper plates of different specifications, single crystal or polycrystalline) by CVD. After the copper foil grown with graphene is cooled, a light-curable epoxy glue is formed on the surface of the graphene / copper foil by wire bar coating with a thickness of 10 μm. Graphene grown on the copper foil, epoxy glue and polyethylene terephthalate film are directly pressed together by the roll-to-roll rolling method, and the pressure is less than 2MPa (1MPa in this embodiment), forming Rolls of "polyethylene terephthalate / epoxy glue / graphene / copper foil" composite film. Use light curing equipment to cure the epoxy glue in the "polyethylene terephthalate / epoxy g...

Embodiment 2

[0026] The difference from Example 1 is:

[0027] Use the method of long-term storage at room temperature to improve the doping effect of epoxy glue. Put the "polyethylene terephthalate / epoxy glue / graphene" film at room temperature for 14 days to obtain a graphene film stably doped with epoxy glue. In this embodiment, the properties of the doped graphene are as follows: the doping type is p-type, the average surface resistance is 305 ohms / square, and the resistance change within 30 days after doping is less than 10%.

Embodiment 3

[0029] The difference from Example 2 is:

[0030] Firstly, the light-cured "polyethylene terephthalate / epoxy glue / graphene / copper foil" film is placed at room temperature for 14 days, and the roll-to-roll electrochemical gas intercalation is performed to obtain Epoxy glue stabilizes doped "polyethylene terephthalate / epoxy glue / graphene" films. In this embodiment, the properties of the doped graphene are as follows: the doping type is p-type, the average surface resistance is 298 ohms / square, and the resistance change within 30 days after doping is less than 10%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
strengthaaaaaaaaaa
thicknessaaaaaaaaaa
translucencyaaaaaaaaaa
Login to view more

Abstract

The invention relates to the field of graphene, in particular to a chemical dopant for achieving stable doping with graphene and a doping method. A photo-curing epoxy glue is adopted as a novel dopantfor stable doping with graphene. The specific doping method comprises the steps that firstly, the photo-curing epoxy glue is formed on the surface of graphene on an initial matrix; then, the graphene, the photo-curing epoxy glue and a transparent matrix are combined for performing photocuring on the epoxy glue; finally, the cured epoxy glue is heated or placed at room temperature for a long timefor treatment, and stable doping with the graphene is achieved. Before transferring, the graphene growing on the initial matrix and the photo-curing epoxy glue are in direct contact and are cured, andthen stable doping of the graphene is achieved through heating or long-term placement under the room temperature. Due to the fact that the intrinsic surface of the graphene and the dopant are in direct contact, the pollution caused by impurities to the interfaces between the graphene and the dopant is avoided, and the doping effect of the epoxy glue can be promoted.

Description

Technical field: [0001] The invention relates to the field of graphene, in particular to a chemical dopant and a doping method for stably doping graphene. Background technique: [0002] Graphene is a new type of two-dimensional carbon material with a honeycomb structure composed of a single layer of carbon atoms. Graphene has excellent electrical conductivity, the electrical conductivity is 1.6 times that of copper; graphene has excellent transmittance to near-infrared, visible light and ultraviolet light, and the light transmittance of single-layer graphene reaches 97.7%; the strength of graphene It can reach 130GPa, more than 100 times that of steel, and has excellent flexibility, thermal stability and chemical stability. Therefore, the application of graphene in electronic and optoelectronic devices can give full play to its structural and performance advantages, and has received great attention. However, graphene in the intrinsic state cannot meet the requirements of F...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
Inventor 马来鹏任文才董世超成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap