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Method for preparing A-phase vanadium dioxide film through magnetron sputtering

A technology of vanadium dioxide and magnetron sputtering, which is applied in sputtering coating, metal material coating process, vacuum evaporation coating, etc., to achieve the effect of easy control and simple operation

Active Publication Date: 2018-03-09
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the research on the preparation of phase A vanadium dioxide by sputtering method is still blank.

Method used

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  • Method for preparing A-phase vanadium dioxide film through magnetron sputtering
  • Method for preparing A-phase vanadium dioxide film through magnetron sputtering

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Experimental program
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Effect test

Embodiment 1

[0025] Vanadium dioxide ceramic target is used, the sputtering gas is argon with a purity of 99.99%, the reaction gas is oxygen with a purity of 99.99%, and the background vacuum is controlled to be 1×10 -4 Pa, deposition temperature 450°C, deposition total pressure 3.0Pa, oxygen partial pressure 1%, sputtering power 100W, sputter vanadium dioxide thin film on (110) surface strontium titanate substrate for 70 minutes. Cool down naturally after sputtering.

[0026] The obtained film was characterized by X-ray diffraction, and the results are shown in the attached figure 1 . Using X-ray diffraction as parallel light incident mode, θ-2θ scanning. From figure 1 It can be seen that the obtained sample is A-phase vanadium dioxide, and the film epitaxy mode is (100) orientation epitaxy. There are no other impurity peaks in the spectrum except the substrate and phase A vanadium dioxide, which proves that the phase purity of the obtained sample is high.

Embodiment 2

[0028] Vanadium dioxide ceramic target is used, the sputtering gas is argon with a purity of 99.99%, the reaction gas is oxygen with a purity of 99.99%, and the background vacuum is controlled to be 8×10 -5 Pa, deposition temperature 500°C, deposition total pressure 3.0Pa, oxygen partial pressure 5%, sputtering power 70W, sputter vanadium dioxide thin film on (110) surface lanthanum aluminate substrate for 120 minutes. Cool down naturally after sputtering.

[0029] The obtained film was characterized by X-ray diffraction, and the results are shown in the attached figure 2 . Using X-ray diffraction as parallel light incident mode, θ-2θ scanning. From figure 2 It can be seen that the obtained sample is A-phase vanadium dioxide, and the film epitaxy mode is (100) orientation epitaxy. There are no other impurity peaks in the spectrum except the substrate and phase A vanadium dioxide, which proves that the phase purity of the obtained sample is high.

Embodiment 3

[0031] Vanadium dioxide ceramic target is used, the sputtering gas is argon with a purity of 99.99%, the reaction gas is oxygen with a purity of 99.99%, and the background vacuum is controlled to be 5×10 -5Pa, deposition temperature 200°C, deposition total pressure 1.0Pa, oxygen partial pressure 3%, sputtering power 120W, on (110) surface dysprosium scandate (DyScO 3 ) on the substrate by sputtering vanadium dioxide thin film for 40 minutes. Cool down naturally after sputtering. Characterization of the samples proved that dysprosium scandate (DyScO 3 )(100) direction and VO 2 (A) Phase lattice matching to obtain a phase A vanadium dioxide film.

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PUM

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Abstract

The invention relates to a method for preparing an A-phase vanadium dioxide film through magnetron sputtering. A vanadium metal target or a vanadium oxide ceramic target serves as the target material,argon serves as sputtering gas and oxygen serves as reaction gas for sputtering the target material so that the A-phase vanadium dioxide film can be formed on a substrate. The cell parameter aA of A-phase vanadium dioxide is 0.844 nm, the cell parameter bA of A-phase vanadium dioxide is 0.844 nm, and the cell parameter cA of A-phase vanadium dioxide is 0.767 nm. Matching of substrate lattice parameters and A-phase vanadium dioxide is the key of the method.

Description

technical field [0001] The invention specifically relates to a method for preparing an A-phase vanadium dioxide film by magnetron sputtering, and belongs to the field of new inorganic functional materials. Background technique [0002] The tetravalent oxide of vanadium has a wide variety of vanadium dioxide crystal phase structures. The known structures include rutile phase structure (R phase), monoclinic phase structure (M phase), triclinic phase structure (T phase), and mesophase A phase and B phase. Among them, M-phase and R-phase vanadium dioxide have attracted extensive attention because they can be transformed into each other, and the phase transition temperature is close to room temperature, and have application prospects in smart energy-saving windows and other aspects. However, there are relatively few studies on the mesophase A phase of vanadium dioxide. [0003] Phase A vanadium dioxide VO 2 (A) was first discovered by Theobald, after which Oka first discovered...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/0036C23C14/083C23C14/35
Inventor 曹逊金平实孙光耀李荣
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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