LED epitaxial growth method

Abstract

The invention discloses an LED epitaxial growth method, comprising the steps of processing a substrate; growing a low-temperature GaN nucleation layer; growing a high temperature GaN buffer layer; growing a non-doped u-GaN layer; growing a N type GaN layer; growing a quantum well layer; growing an electronic barrier layer; growing a high temperature P type GaN layer; growing InxGa1 xN:Si / AlyGa1 yN:Si superlattice structure, and conducting cooling. The growth of the InxGa1 xN:Si / AlyGa1 yN:Si superlattice structure comprises the steps of adjusting the growth temperature as 750-1050DC, and adjusting the growing pressure as 100 Torr-500Torr. The growth of the InxGa1 XN:Si in thickness of 1nm-5nm comprises the steps of adjusting the growth temperature as 750-1050 DC, and adjusting the growing pressure as 100 Torr-500Torr. The growth of the AlyGa1 yN:Si in thickness of 1nm-5nm comprises the steps of alternatively growing the InxGa1 xN:Si and AlyGa1 yN:Si with the period being 1-10. The invention is advantageous in that through the InxGa1 xN:Si / AlyGa1 yN:Si superlattice structure, the barrier height difference with AZO film material can be adjusted, and contact resistor can be reduced, and work voltage of the LED chip can be decreased, and brightness can be enhanced.

Description

technical field [0001] The invention relates to the field of LED chips, and more specifically, to a method for LED epitaxial growth. Background technique [0002] With the development of semiconductor, computer, solar energy and other industries, transparent conductive oxide (transparent conducting oxide, TCO) thin films are produced and developed. TCO thin films have optoelectronic properties such as wide band gap, high light transmittance in the visible spectrum region and low resistivity. Among them, ITO (In 2 o 3 : Sn) thin film. However, the In in the ITO film 2 o 3 The price is expensive, the production cost is high, and the In material is toxic. In the process of preparing and applying the ITO film, it is easy to cause harm to the staff. In addition, the atomic mass of Sn and In is large, and it is easy to penetrate into the ITO film during the preparation of the ITO film. Inside the substrate, the substrate material is polluted, especially in the field of liqui...

AI Technical Summary

Problems solved by technology

However, the In in the ITO film 2 o 3 The price is expensive, the production cost is high, and the In material is toxic, and it is easy to cause harm to the staff during the process of preparing and applying the ITO film. In addition, the atomic mass of Sn and In is large, and it is easy to penetrate into the ITO film during the preparation of the ITO film. Inside the substrate, the substrate material is polluted, especially in the field of liquid crystal displays, the ITO thin film contaminates the substrate most seriously

Images