Check patentability & draft patents in minutes with Patsnap Eureka AI!

A Design Method for Thin Sound-absorbing Structures for Low-Frequency Noise Containing Multiple Single-Frequency Components

A technology of low-frequency noise and design method, applied in microphones, sensor parts, sensors, etc., can solve the problems of complex adaptive adjustment equipment, large thickness of air layer between plates, poor sound absorption effect, etc.

Active Publication Date: 2020-09-08
NANJING UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Chinese published patent CN101962980A describes a multi-Helmholtz resonator parallel honeycomb sandwich wooden sound-absorbing panel, which expands the volume of the chamber, has a wider sound-absorbing frequency band and better sound-absorbing performance at medium and high frequencies, but low-frequency Sound absorption effect is poor
Chinese published patent CN202093817 describes a composite sound-absorbing structure composed of perforated plates, resonant plates, and springs. The sound-absorbing frequency band extends to the low-frequency range, but the sound-absorbing effect is poor below 200Hz
CN203895113U proposes a double-layer low-frequency resonance sound-absorbing structure with micro-perforated resonance sound-absorbing in front and thin-plate resonance sound-absorbing structure behind the 100Hz and 200Hz noises that transformers emit, but the thickness of the air layer between the plates is relatively large
CN102044239 describes a resonant sound-absorbing structure composed of a perforated plate and a resonant cavity, which can adaptively adjust the depth of the cavity to change the low-frequency sound-absorbing performance, but the adaptive adjustment equipment is relatively complicated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Design Method for Thin Sound-absorbing Structures for Low-Frequency Noise Containing Multiple Single-Frequency Components
  • A Design Method for Thin Sound-absorbing Structures for Low-Frequency Noise Containing Multiple Single-Frequency Components
  • A Design Method for Thin Sound-absorbing Structures for Low-Frequency Noise Containing Multiple Single-Frequency Components

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The following is an example of three specific frequency components at the low frequency of the transformer: f 1 = 100Hz, f 2 = 200Hz, f 3 =300Hz, the present invention will be described in detail.

[0046] 1. According to step (1) in the technical solution, select the resonant frequency to be 173Hz, and the equivalent resistance R ms =4.07kg / s, a speaker with a thickness of 7.5cm and a cone diameter of 16.5cm, measure the TS parameters of the speaker: the DC resistance R of the speaker E =32Ω, voice coil inductance L E =9.56mH, force factor Bl=17.00T·m, mechanical mass M of loudspeaker and air load ms =15.95g, equivalent to C ms =0.23mm / N, the volume of the back cavity of the box V=2.2E-3m 3 .

[0047] 2. According to step (2) in the technical solution, build a NIC negative impedance converter to realize negative resistance-R E , to offset the DC resistance of the speaker.

[0048] 3. According to step (3) in the technical solution, the negative resistance-R E...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a thin sound absorption structure for low-frequency noises containing multiple single-frequency components and a design method thereof. The structure is that a branch circuit 1formed by serially connecting an inductor L1, a capacitor C1 and a negative resistor -RE1, a branch circuit 2 formed by serially connecting an inductor L2, a capacitor C2 and a negative resistor -RE2, ......, and a branch circuit N formed by serially connecting an inductor LN, a capacitor CN and a negative resistor -REN are connected in parallel, and are serially connected with a negative resistor -RE to form a shunt circuit, and then the shunt circuit is connected in parallel to two ends of a moving-coil loudspeaker unit. The sound absorption structure is designed based on a shunt loudspeaker, wherein each branch resonant loop of the shunt circuit can be designed independently of each other, and for multiple single-frequency components at a low frequency, better absorption can be achieved, and the thickness of the structure only depends on the loudspeaker unit.

Description

[0001] 1. Technical field [0002] The invention proposes a design method for a thin sound-absorbing structure aimed at low-frequency noise containing multiple single-frequency components. [0003] 2. Background technology [0004] Toned noise contains an obvious fundamental frequency and noise accompanied by fundamental frequency and harmonics. It does not belong to broadband noise and is noise containing multiple single-frequency components. [0005] Traditional sound-absorbing treatment mainly uses porous sound-absorbing materials and resonant sound-absorbing structures. Porous sound-absorbing materials are poor at low-frequency sound absorption and often cause environmental pollution. The resonance of the Helmholtz resonator is very sharp, and its sound absorption ability is very strong at the resonance frequency. Once it deviates from this frequency, the sound absorption coefficient will decrease rapidly, so it is suitable for single-frequency sound absorption. Using a c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04R9/06H04R3/00
CPCH04R3/00H04R9/06H04R2410/05
Inventor 丛超楠陶建成邱小军
Owner NANJING UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More