Manufacturing method of polysilicon thin film, thin film, transistor, substrate and laser equipment

Abstract

The invention provides a manufacturing method of a polysilicon thin film, a thin film, a transistor, a substrate and a laser device. The method comprises: forming a buffer layer on a substrate; forming an amorphous silicon layer on the buffer layer; performing excimer laser annealing on the amorphous silicon layer for the first time with a laser beam of a first wavelength; The amorphous silicon layer after the sub-excimer laser annealing is subjected to a second excimer laser annealing with a laser beam of a second wavelength, wherein the second wavelength is smaller than the first wavelength. The method of the present invention can solve the problem of high surface roughness and non-uniform polysilicon crystal grains caused by excimer laser annealing in the prior art to produce a low-temperature polysilicon film through two excimer laser annealings with different wavelengths.

Description

technical field [0001] The invention relates to the technical field of low-temperature polysilicon thin films, in particular to a method for manufacturing polysilicon thin films, thin films, transistors, substrates and laser equipment. Background technique [0002] Active-matrix organic light emitting diode (AMOLED) has become the future display due to its advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle and ultra-light and ultra-thin. The best choice for technology. At present, in AMOLED, excimer laser annealing (ELA), solid phase crystallization (SPC) or metal induced crystallization (MIC) is usually used to fabricate the polysilicon layer. Among them, the production of the polysilicon thin film of the active layer of the transistor in the backplane by excimer laser annealing (ELA) process is the only method that has achieved mass production. [0003] Excimer laser annealing (ELA) process is a relatively co...

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Problems solved by technology

[0004] The purpose of the technical solution of the present invention is to provide a method for making a polysilicon film, a film, a transistor, a substrate, and a laser device, so as to solve the problem of using the prior art excimer laser annealing to make a low-temperature polysilicon film, resulting in higher surface roughness and poor polysilicon crystal grains. uniform problem

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