Composite encapsulating material with high heat conduction activity and preparation method thereof
A packaging material, high thermal conductivity technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electrical components, etc., can solve the problems of difficult connection between diamond and aluminum, insufficient bonding strength, low expansion coefficient, etc., to achieve good interface bonding , the effect of low thermal expansion coefficient, high thermal conductivity and thermal expansion coefficient
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Embodiment 1
[0038] Preparation of Active Solder SnAg by Vacuum Air Atomization 4 Ti 4Powder, the particle size of which is 20 μm, the particle size of diamond particle is 200 μm, and the particle size of aluminum powder is 20 μm. The volume percentages were 60%, 1%, 39% diamond particles, SnAg 4 Ti 4 Powder and aluminum powder were mixed and ball milled for 60 minutes, and the mixed powder after ball milling was put into a spark plasma sintering furnace for sintering to obtain a diamond / aluminum / active solder composite material. The sintering temperature is 600°C, the sintering pressure is 50MPa, the heating rate is 100°C / min, the heat preservation is 5min, and the atmosphere is vacuum. The diamond / aluminum / active solder composite material prepared by this process has a thermal conductivity of 703W / m K and a linear expansion coefficient of 7.9×10 -6 K, the density is 99.5%.
Embodiment 2
[0040] The processing condition of the present embodiment is identical with embodiment 1, only changes active solder SnAg 4 Ti 4 Alloy powder ratio, using 5% SnAg 4 Ti 4 Alloy powder, 58% diamond particles, 37% aluminum powder. The thermal conductivity of the prepared diamond / aluminum composite material is 602W / m·K, and the linear expansion coefficient is 8.5×10 -6 K, the density is 99.7%.
Embodiment 3
[0042] The process conditions of this embodiment are the same as those of Embodiment 1, only the particle size of the aluminum powder is changed, and the size of the aluminum powder is 100 μm. The thermal conductivity of the prepared diamond / aluminum / active solder composite material is 588W / m·K, and the linear expansion coefficient is 8.0×10 -6 K, the density is 98.8%.
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