Composite encapsulating material with high heat conduction activity and preparation method thereof

A packaging material, high thermal conductivity technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electrical components, etc., can solve the problems of difficult connection between diamond and aluminum, insufficient bonding strength, low expansion coefficient, etc., to achieve good interface bonding , the effect of low thermal expansion coefficient, high thermal conductivity and thermal expansion coefficient

Active Publication Date: 2018-03-27
BEIJING INST OF NONFERROUS METALS & RARE EARTH
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems of poor wettability and insufficient bonding strength between diamond and aluminum, the present invention provides a high-volume-fraction diamond-reinforced aluminum-based composite material with high thermal conductivity and a preparation method, and adopts spark plasma sintering technology to prepare large-scale integrated circuits for heat dissipation High thermal conductivity diamond / aluminum composite packaging material for the substrate, this method is simple and easy to implement, and is conducive to mass production
The invention mainly solves the problem of difficult connection between diamond and aluminum, thereby obtaining a heat dissipation substrate material with high thermal conductivity and low expansion coefficient

Method used

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  • Composite encapsulating material with high heat conduction activity and preparation method thereof
  • Composite encapsulating material with high heat conduction activity and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Preparation of Active Solder SnAg by Vacuum Air Atomization 4 Ti 4Powder, the particle size of which is 20 μm, the particle size of diamond particle is 200 μm, and the particle size of aluminum powder is 20 μm. The volume percentages were 60%, 1%, 39% diamond particles, SnAg 4 Ti 4 Powder and aluminum powder were mixed and ball milled for 60 minutes, and the mixed powder after ball milling was put into a spark plasma sintering furnace for sintering to obtain a diamond / aluminum / active solder composite material. The sintering temperature is 600°C, the sintering pressure is 50MPa, the heating rate is 100°C / min, the heat preservation is 5min, and the atmosphere is vacuum. The diamond / aluminum / active solder composite material prepared by this process has a thermal conductivity of 703W / m K and a linear expansion coefficient of 7.9×10 -6 K, the density is 99.5%.

Embodiment 2

[0040] The processing condition of the present embodiment is identical with embodiment 1, only changes active solder SnAg 4 Ti 4 Alloy powder ratio, using 5% SnAg 4 Ti 4 Alloy powder, 58% diamond particles, 37% aluminum powder. The thermal conductivity of the prepared diamond / aluminum composite material is 602W / m·K, and the linear expansion coefficient is 8.5×10 -6 K, the density is 99.7%.

Embodiment 3

[0042] The process conditions of this embodiment are the same as those of Embodiment 1, only the particle size of the aluminum powder is changed, and the size of the aluminum powder is 100 μm. The thermal conductivity of the prepared diamond / aluminum / active solder composite material is 588W / m·K, and the linear expansion coefficient is 8.0×10 -6 K, the density is 98.8%.

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Abstract

The invention discloses a composite encapsulating material with high heat conduction activity and a preparation method thereof, and belongs to the field of metal based composite materials. The composite material consists of SnAg4Ti4 alloy powder, aluminum powder and diamond particle reinforcer, wherein volume percentage of diamond particles is 50%-70%, volume percentage of aluminum powder is 25%-49%, and volume percentage of SnAg4Ti4T alloy powder is 1%-5%. A preparation method for the composite encapsulating material comprises the following steps: preparing active brazing filler metal SnAg4Ti4 alloy powder through a vacuum gas-atomization powdering furnace, mechanically mixing powder, and putting mixed powder into a discharge plasma sintering furnace to prepare a diamond/aluminum composite material. The sintered composite material is relatively good in interface bonding, is relatively high in compactness, has heat conductivity of 703W/m.K, has a thermal expansion coefficient reduced to 7.9*10<-6>/K, and has compactness of 97.8% or more. The preparation method is strong in operability, is simple in process, and can be used for the fields of electronic encapsulating and the like.

Description

technical field [0001] The invention relates to a highly thermally conductive active composite packaging material and a preparation method thereof, in particular to a high thermally conductive diamond / aluminum composite packaging material prepared by spark plasma sintering technology and a production method thereof, mainly used for heat dissipation substrates of ultra-large-scale integrated circuits, The invention belongs to the technical field of metal matrix composite materials. Background technique [0002] With the development of the electronics industry and the advancement of high-density packaging technology, the operating temperature of the circuit continues to rise, causing the traditional heat dissipation substrate to no longer meet its performance requirements. Therefore, it is of great theoretical significance and practical application value to study new materials for heat dissipation substrates with high thermal conductivity and low expansion coefficient. Since ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C26/00C22C21/00C22C1/10C22C1/05H01L23/29
CPCC22C1/0416C22C1/058C22C21/00C22C26/00H01L23/29
Inventor 姚映君蔡正旭王炜张国清元琳琳齐岳峰季辰宇
Owner BEIJING INST OF NONFERROUS METALS & RARE EARTH
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