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High-EB bipolar semiconductor protection device and manufacturing method thereof

A technology for protecting devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., capable of solving problems such as single protection function

Inactive Publication Date: 2018-03-27
江苏吉莱微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For the protection mode of overvoltage and overcurrent caused by external factors, the traditional types of protection components include GSD, MOV, TVS, TSS and other types, which can only realize a single protection function

Method used

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  • High-EB bipolar semiconductor protection device and manufacturing method thereof
  • High-EB bipolar semiconductor protection device and manufacturing method thereof
  • High-EB bipolar semiconductor protection device and manufacturing method thereof

Examples

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Embodiment Construction

[0033] Such as Figure 1-4 As shown, a high EB bipolar semiconductor protection device includes a chip, two NPN transistors with an N-type silicon wafer substrate are arranged on the upper left of the chip, two PNP transistors are arranged on the lower left of the chip, and the chip Two SCR thyristors arranged up and down are arranged in the middle part, and two TRIAC thyristors arranged up and down are arranged in the right area of ​​the chip.

[0034] A method for manufacturing a high EB bipolar semiconductor protection device, comprising the following steps:

[0035] Step 1: Provide an N-type CZ substrate silicon wafer for double-sided polishing, with a resistivity of 30-35Ω cm and a wafer thickness of 210±5μm;

[0036] Step 2: Perform high-temperature and long-term wet oxygen oxidation on the silicon wafer substrate, T=1150±10°C, t=12h[1h(O2)↑4h wet oxygen+1h(O2)+ 4h wet oxygen+ 2h(O2)+ 4h(N2,O2)↓], oxide layer thickness dsio2≥1.4μm;

[0037] Step 3: P-type partition wa...

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Abstract

The invention discloses a high-EB bipolar semiconductor protection device. The device comprises a chip; two NPN transistors are arranged at the upper left side of the chip; two PNP transistors are arranged at the lower left of the chip; two SCRs are arranged at the middle of the chip; and two TRIACs are arranged at the right of the chip. The manufacturing method includes the following steps that:an N type CZ substrate silicon wafer is provided; the silicon wafer substrate is subjected to high-temperature long-time wet oxide oxidation; P type separation wall photo-etching is performed; P typeseparation wall diffusion is performed; second photo-etching is performed; first base diffusion is performed; third photo-etching is performed; second base diffusion is performed; fourth photo-etchingis performed; phosphorus diffusion is performed; LPCVD is performed; fifth photo-etching is performed; metallization is performed; sixth photo-etching (metal back etching) is performed; aluminum alloy treatment is performed; and back surface metallization is performed. According to the high-EB bipolar semiconductor protection device and the manufacturing method thereof of the invention, by meansof semiconductor power device modeling simulation software, a plurality of kinds of source cell units such as the PNP transistors, the NPN transistors, the SCRs and the alternating current switch TRIACs can be integrated in the silicon substrate; and by means of reasonable layout, the high-EB voltage characteristics of the transistors, the triggering conduction mechanisms of the SCRs, and the bidirectional conduction and bidirectional blocking characteristics of the TRAICs enable integrated, complementary and bipolar protection functions.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a high EB withstand voltage integrated complementary bipolar semiconductor protection device and a manufacturing method thereof. Background technique [0002] Semiconductor protection devices are mainly used in line surge suppression protection of SLICS, CO, PBX, DLC, DSLAM, FITL, WLL, HFC, ISDN and other networks, communications and power grids. The main mechanism of action is that when the overvoltage and overcurrent abnormal conditions caused by various interference impacts outside the system, the device can quickly respond within a microsecond time, from the blocking state to the conducting state, and through the ground discharge mode , to protect the safety of the system, and has the ability to recover quickly and autonomously after the impact of interference. [0003] For the overvoltage and overcurrent protection modes caused by external factors, the tradition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/06H01L21/8222
CPCH01L27/0248H01L21/8222H01L27/0207H01L27/0641
Inventor 许志峰
Owner 江苏吉莱微电子股份有限公司
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