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A coating and crystal domain technology, applied in the coating field, can solve the problem of high hardness of the coating

Active Publication Date: 2020-09-01
SUMITOMO ELECTRIC IND LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Films known to accumulate strain energy have high hardness

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0046] [First Embodiment: Film]

[0047] figure 1 A cross-sectional view of one example of the film according to the present embodiment is shown. refer to figure 1 , the coating film 1 is provided on the surface of the substrate 2 . There is no particular limitation on the shape of the base material 2, and thus no particular limitation on its material. For example, when the base material 2 is a base body for a cutting tool, a material capable of withstanding cutting resistance, such as cemented carbide, steel, cermet, ceramic, and diamond sintered material, can be appropriately used.

[0048] The film 1 includes one or more layers, and at least one of the layers is a domain structure layer composed of two or more crystal domains with different compositions. There is no particular limitation on the number of layers in the film 1, and there is no particular limitation on the positions of the domain structure layers. The film 1 according to the present embodiment has a confi...

no. 2 approach

[0090] [Second Embodiment: Film]

[0091]Although the case where the domain structure layer 4 has a sea-island structure has been described in the first embodiment, the domain structure layer 4 is not limited to the above configuration. In the present embodiment, a case where the sizes and nearest neighbor distances of the first crystal domain 41 and the second crystal domain 42 are equal to each other will be described. In this embodiment, points different from the first embodiment will be described, and descriptions of the same points will be omitted.

[0092] Figure 4 is a cross-sectional view schematically showing the configuration in the in-plane direction of the crystal domain structure layer by another example, Figure 5 is a cross-sectional view schematically showing the configuration in the thickness direction of the domain structure layer by another example. In the present embodiment, the first crystal domain 41 satisfies (1) to (4) above and the second crystal d...

no. 3 approach

[0095] [Third Embodiment: Manufacturing Method of Film]

[0096] The crystal domain structure layer 4 according to the first embodiment and the second embodiment can be produced by vapor deposition in which pulse power can be supplied to the first crystal domain 41 and the second crystal domain 42 Target for source material (evaporation source). In particular, PVD is preferably used because the film produced by PVD is denser, has higher hardness, and has better wear resistance and adhesion than that produced by CVD.

[0097] Such PVD includes high power pulsed magnetron sputtering (HiPIMS), pulsed magnetron sputtering, pulsed laser ablation, and pulsed vacuum cathodic arc deposition. Among them, HiPIMS is suitable for the production of the domain structure layer 4 because it is easy to control the supply amount of ions and atoms that can be supplied in response to one pulse, and a film having a dense and smooth surface can be produced. By way of example of the method of manu...

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Abstract

At least one layer of the film on the surface of the substrate is a domain structure layer formed of at least two crystal domains having different compositions. When the size of each of the plurality of first crystal domains present in the crystal domain structure layer is defined as the diameter of each imaginary circumscribed circle in contact with the first crystal domain, and the nearest neighbor distance of each first crystal domain is defined as When it is the shortest distance between the center of one circumscribed circle and the center of another adjacent circumscribed circle, the average size of the first crystal domain is not less than 1 nm and not more than 10 nm, and the average nearest neighbor distance of the first crystal domain is It is not less than 1 nm and not more than 12 nm. More than 95% of the first crystal domains are within ±25% of the average size. More than 95% of the first domains have nearest neighbor distances within ±25% of the average nearest neighbor distance.

Description

technical field [0001] The present disclosure relates to coatings on the surface of a substrate. This application claims priority from International Application PCT / JP2015 / 070314 filed on July 15, 2015, the entire contents of which are incorporated herein by reference. Background technique [0002] In order to improve various characteristics of industrial products such as cutting tools, wear-resistant tools, molds, and electronic parts, a film having specific physical properties is generally provided on the surface of such a substrate by vapor deposition. [0003] Vapor deposition includes physical vapor deposition (PVD) or chemical vapor deposition (CVD). In particular, since the coating formed by PVD reduces the possibility of deterioration of the strength of the base material, the coating is widely used in cutting tools requiring high strength, such as drills, end mills and indexable inserts for milling, wear-resistant tools and mould. In particular, the requirements f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06
CPCH01J37/3467C23C14/0036C23C14/021C23C14/024C23C14/0641C23C14/345C23C14/352C23C14/505C23C14/541C23C14/545C23C14/548C23C30/005C23C28/44C23C14/3485C23C14/06C23C28/044C23C28/048C23C14/0617C23C14/35
Inventor 内海庆春佩尔·克里斯多夫·阿伦斯古格津田圭一康斯坦提诺斯·萨拉基诺斯丹尼尔·冈纳·马根法尔特
Owner SUMITOMO ELECTRIC IND LTD