AlGaN-based solar-blinded ultraviolet avalanche heterojunction photoelectric transistor detector and fabrication method thereof

Abstract

The invention relates to the technical field of a semiconductor ultraviolet photoelectric detector, in particular to an AlGaN-based solar-blinded ultraviolet avalanche heterojunction photoelectric transistor detector and a fabrication method thereof. The AlGaN-based solar-blinded ultraviolet avalanche heterojunction photoelectric transistor detector comprises a substrate, wherein an unintentionally-doped low-temperature AlN buffer layer, an unintentionally-doped high-temperature AlN buffer layer, an unintentionally-doped Al<m>Ga<1-m>N window layer, an n-type Al<m>Ga<1-m> layer, an n-type Al<n>Ga<1-n>N constituent slowly-changing layer, an unintentionally-doped AlGa<1-a>N absorption multiplication layer, an unintentionally-doped AlGa<1-b>N absorption multiplication layer, an unintentionally-doped Al<c>Ga<1-c>N absorption multiplication layer, an Mg-doped p-type Al<x>Ga<1-x>N layer, an unintentionally-doped Al<x>Ga<1-x>N layer, an n-type Al<y>Ga<1-y>N constituent slowly-changing layer, an n-type Al<z>Ga<1-z>N layer and an n-type ohmic contact electrode are sequentially grown on the substrate by a metal organic chemical vapor deposition epitaxial growth method (or a molecular beam epitaxial growth method), and the n-type ohmic contact electrode is finally obtained by deposition of a device process.

Description

technical field [0001] The invention relates to the technical field of semiconductor ultraviolet photodetectors, more specifically, to an AlGaN-based sun-blind ultraviolet avalanche heterojunction phototransistor detector and a preparation method thereof. Background technique [0002] In recent years, with the development of information technology, people have more and more diversified means of capturing and detecting surrounding environment information. The demand for ultraviolet photodetectors is also increasing. [0003] At present, the common ultraviolet photodetectors on the market are mainly Si-based photodiodes and vacuum electron photomultiplier tubes equipped with filters. Ultraviolet photodetectors based on Group III nitride semiconductors (including binary compounds GaN, AlN, ternary compounds AlGaN, InGaN, AlInN and quaternary compounds AlInGaN) have direct band gaps due to the semiconductor material system, and the forbidden bands of their multiple compounds T...

AI Technical Summary

Problems solved by technology

[0004] For the existing AlGaN-based APDs, the leakage current is large under high reverse bias voltage, the avalanche excess noise is large (the avalanche is jointly triggered by electrons and holes), the avalanche operating voltage is high, and the dislocation density in the epitaxial layer of the material is high. The problem of easy failure under avalanche breakdown working conditions; HPT has problems such as low weak light detection ability and slow response speed, and p-type dopant atom Mg diffusion deteriorates device performance. The purpose of the present invention is to provide a multi-heterogeneous Avalanche heterojunction phototransistor with junction multiplication region and low temperature insertion layer

Problems such as high multiplication noise, large leakage current and slow response speed will seriously affect the detection performance of UV detectors

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