A kind of manufacturing method of light-emitting diode epitaxial wafer
A technology of light-emitting diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve the problems of low production capacity of epitaxial wafers
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Embodiment 1
[0042] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, see figure 1 , the manufacturing method includes:
[0043] Step 101: Baking the graphite disk to clean the surface of the graphite disk.
[0044]As mentioned above, when growing buffer layer, N-type semiconductor layer, multiple quantum well layer, electron blocking layer and P-type semiconductor layer on the substrate, there is no substrate shielding on the substrate and the graphite disk for placing the substrate. The reactants generated during the growth process will be deposited on the area, and the reactants deposited on the graphite disk are called coating. As the growth progresses, the coating on the graphite disk becomes more and more. When the coating on the graphite disk reaches a certain level, it will hinder the deposition of reactants on the substrate. In this embodiment, the graphite disk is baked to remove The coating on the graphite disk c...
Embodiment 2
[0094] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, and the manufacturing method provided in this embodiment is a specific realization of the manufacturing method provided in Embodiment 1.
[0095] In this embodiment, after the graphite disk is baked and the surface of the graphite disk is cleaned, four substrates are placed on the graphite disk in turn to form an epitaxial wafer. Specifically, when growing the quantum well layer in the multiple quantum well layer on each substrate, the growth temperature is 853.2°C, and the flow rate of the gas containing indium element in the MO source into the MOCVD reaction chamber is 700 sccm.
[0096] The detection of the four epitaxial wafers formed revealed that the first epitaxial wafer formed on the substrate placed on the graphite disk had a luminous wavelength of 468.4nm and a luminous brightness of 20.4mw; the second epitaxial wafer placed on the graphite disk T...
Embodiment 3
[0099] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, and the manufacturing method provided in this embodiment is another specific implementation of the manufacturing method provided in Embodiment 1.
[0100] In this embodiment, after the graphite disk is baked and the surface of the graphite disk is cleaned, four substrates are placed on the graphite disk in turn to form an epitaxial wafer. Specifically, when growing quantum well layers in multiple quantum well layers on each substrate, the flow rate of the gas containing indium in the MO source into the MOCVD reaction chamber is 700 sccm; the first one is placed on the substrate on the graphite disk When growing the quantum well layer in the multi-quantum well layer, the growth temperature is 853.2°C; when the second one is placed on the substrate on the graphite disk to grow the quantum well layer in the multi-quantum well layer, the growth temperature is 85...
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Abstract
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