Process for eliminating impurity and gas element defects in nickel plate targets

Abstract

The invention belongs to the field of nonferrous metal machining, and provides a purifying process for eliminating impurity and gas element defects in nickel plate targets. The process mainly comprises the steps of material preparation, furnace cleaning, vacuumizing, smelting, purification and smelting, forging, hot rolling, cold rolling and annealing, and inspection. The process can fully removeimpurities and gas elements, such as Co, Fe, Cu and C, N, O and the like; and through further machining, the purity of the nickel plate targets can be not less than 99.996%, the internals of the nickel plate targets are continuous and consistent, and the nickel plate targets have no defects such as centralized shrinkage holes, looseness, air holes, segregation, grain increment and the like.

Description

technical field [0001] The invention belongs to the technical field of nonferrous metal processing, relates to a target material, in particular to a purification process for eliminating impurities and gas element defects existing in a nickel plate target material. Background technique [0002] The rapid development of information technology requires the integration of integrated circuits to be higher and higher, and the size of the unit devices in the circuit is continuously reduced, and the size of the components is from the millimeter level to the micron level, and then to the nanometer level. Each unit device is composed of substrate, insulating layer, dielectric layer, conductor layer and protective layer. Among them, the sputtering coating process is used for the dielectric layer, conductor layer and even the protective layer, so the sputtering target is one of the core materials for preparing integrated circuits. Among them, the target material for semiconductor coati...

AI Technical Summary

Problems solved by technology

[0004] At present, through the analysis and research on the purity, surface quality and internal casting defects of high-purity nickel ingots obtained by electron beam vacuum smelting, that is, through the observation of the macroscopic appearance of nickel ingots and chemical analysis of impurity content, it is found that one or two smelting can make the raw materials Purified to 99.99% (such as China's patent application 201610812462.2 "Preparation process of high-purity nickel ingot for semiconductor target"), but there are still many macroscopic casting defects in the ingot, which still cannot meet the processing needs of high-purity nickel plate target