Preparation method of diamond/copper composite high in heat conduction performance

Abstract

The invention discloses a preparation method of a diamond/copper composite high in heat conduction performance. The preparation method comprises the following steps of 1, uniformly mixing diamond obtained after surface of the diamond is subjected to degreasing and roughening treatment with tungsten powder according to the mass ratio of 1: 4.5, heating a powder mixture under the vacuum condition, conducting heat preservation for 2-8 hours at the temperature of 1030 DEG C, and finally, separating out modified tungsten-plated diamond, wherein the vacuum degree is 10<-2>-10<-4> Pa, and the temperature rising rate is 5 DEG C/min; and 2, uniformly mixing the tungsten-plated diamond, with the mean particle size being 125 microns, obtained after surface modification with copper powder with the mean particle size being 45 microns with the total volume content of the tungsten-plated diamond accounting for 55%, sintering an obtained powder mixture, and then cooling the obtained power mixture to the room temperature, so that the diamond/copper composite is obtained, wherein the sintering parameters are that the pressing pressure is 40 MPa, the temperature is 1000 DEG C, the temperature risingrate is 100 DEG C/min, the sintering time is 10 minutes, and the atmosphere is vacuum.

Description

technical field [0001] The invention belongs to the technical field of preparing high thermal conductivity composite materials, in particular to a preparation method of high thermal conductivity diamond / copper composite materials. Background technique [0002] With the development of the electronic industry and high-density packaging technology, the operating temperature of the circuit continues to rise, resulting in the traditional packaging materials can no longer meet its performance requirements. In the field of microelectronics, every 10°C decrease in junction temperature can double the service life of a chip. Therefore, the preparation of electronic packaging materials with high thermal conductivity and low thermal expansion coefficient is the key to the rapid development of the electronics industry. [0003] Common metal materials such as Cu and Al, although their thermal conductivity is as high as 398W / (m·k), their thermal expansion coefficients are too different fr...

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Problems solved by technology

[0007] The purpose of this invention is to provide a kind of preparation method of diamond / copper composite material with high thermal conductivity, which has solved the problem that the bonding strength of diamond and copper substrate in the existing preparation method is not high, the protective effect on diamond is not high, and the tungsten after tungsten plating Diamond separation is difficult, the process is complicated and cumbersome, the preparation cycle is long, and the product performance is unstable

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