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Shallow buried high-voltage Schottky rectifier and manufacturing method thereof

A rectifier, Schottky barrier layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large leakage current, achieve low leakage current, high breakdown voltage, low forward The effect of pressure drop

Pending Publication Date: 2018-04-20
CHONGQING ZHONGKE YUXIN ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the invention is to solve the problem of large leakage current in the prior art

Method used

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  • Shallow buried high-voltage Schottky rectifier and manufacturing method thereof
  • Shallow buried high-voltage Schottky rectifier and manufacturing method thereof
  • Shallow buried high-voltage Schottky rectifier and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A shallow-buried high-voltage Schottky rectifier, characterized in that it includes a heavily doped first conductivity type substrate layer 10, a lightly doped first conductivity type epitaxial layer 20, a second conductivity type guard ring region 21, a first conductivity type Type shallow buried layer 22 , Schottky barrier layer 23 , field dielectric layer 30 , anode metal layer 40 and cathode metal layer 50 .

[0038] The heavily doped first conductive type substrate layer 10 covers the cathode metal layer 50 .

[0039] The lightly doped first conductive type epitaxial layer 20 covers the heavily doped first conductive type substrate layer 10 .

[0040] The guard ring region 21 of the second conductivity type covers part of the surface of the epitaxial layer 20 of the lightly doped first conductivity type. The guard ring region 21 of the second conductivity type is a closed ring structure. The middle area surrounded by the ring is the active area.

[0041] The sha...

Embodiment 2

[0046] A method for manufacturing a shallow-buried high-voltage Schottky rectifier, characterized in that it comprises the following steps:

[0047] 1) Covering the lightly doped first conductivity type epitaxial layer 20 on the heavily doped first conductivity type substrate layer 10 .

[0048] 2) Covering the field dielectric layer 30 on the lightly doped epitaxial layer 20 of the first conductivity type.

[0049] 3) Forming a guard ring region 21 of the second conductivity type in a closed ring structure by using the first mask layer. Its annular surrounding part is the active area.

[0050] 4) Etching the field dielectric layer 30 above the active region by using the second mask layer.

[0051] 5) Impurities of the first conductivity type are implanted with high energy into the active region or part of the active region, and the shallow buried layer 22 of the first conductivity type is formed after rapid annealing.

[0052] 6) Covering the Schottky barrier layer 23 on a...

Embodiment 3

[0064] The shallow-buried high-voltage Schottky rectifier, ie, the new device 1, was fabricated using the fabrication method in Example 2. Wherein, the first conductivity type is N type, and the second conductivity type is P type.

[0065] Such as figure 1 As shown, the shallow-buried high-voltage Schottky rectifier produced in this embodiment is characterized in that it includes an N+ type substrate layer 10, an N-type epitaxial layer 20, a P-type guard ring region 21, an N-type shallow buried layer 22, and a Schottky rectifier. Base barrier layer 23 , field dielectric layer 30 , anode metal layer 40 and cathode metal layer 50 .

[0066] The N-type epitaxial layer 20 covers the N+ type substrate layer 10 . The N+ type substrate layer 10 is an arsenic impurity substrate with a doping concentration above the 19th power. The N-type epitaxial layer 20 has an impurity concentration of 2×10 15 cm -3 Phosphorous impurity epitaxial layer.

[0067] The P-type guard ring region 2...

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Abstract

The invention discloses a shallow buried high-voltage Schottky rectifier and a manufacturing method thereof. The shallow buried high-voltage Schottky rectifier is characterized in that the shallow buried high-voltage Schottky rectifier comprises a first conductivity type heavily doped substrate layer, a first conductivity type lightly doped epitaxial layer, a second conductivity type protection ring region, a first conductivity type shallow buried layer, a Schottky barrier layer, a field dielectric layer, an anode metal layer, and a cathode metal layer; the second conductivity type protectionring region covers a portion of the surface of the first conductivity type lightly doped epitaxial layer; the first conductivity type shallow buried layer floats inside the first conductivity type lightly doped epitaxial layer; the first conductivity type shallow buried layer contacts with or does not contact with the second conductivity type protection ring region; the Schottky barrier layer covers a portion of the surface of the first conductivity type lightly doped epitaxial layer and a portion of the surface of the second conductivity type protection ring region; the field dielectric layercovers a portion of the surface of the first conductivity type lightly doped epitaxial layer; and the anode metal layer covers the dielectric layer and the Schottky barrier layer.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a shallow-buried high-voltage Schottky rectifier and a manufacturing method thereof. Background technique [0002] Power semiconductor rectifiers are widely used in power converters and power supplies. Two common high-voltage semiconductor rectifier structures are PIN high-voltage rectifier and Schottky high-voltage rectifier. [0003] Among them, the PIN rectifier has a large forward voltage drop and a long reverse recovery time, but has a small leakage and has excellent high temperature stability. It is mainly used in the medium and high voltage range above 300V. [0004] Schottky barrier rectifiers are mainly used in the medium and low voltage range below 200V. It has a small forward voltage drop and a short reverse recovery time, but has a high reverse leakage current and poor high temperature reliability. [0005] In the practical application of Schottk...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/06H01L29/66143H01L29/872
Inventor 陈文锁张培健杨伟陈兴杨婵钟怡欧宏旗
Owner CHONGQING ZHONGKE YUXIN ELECTRONICS
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