A device and method for preparing compound powder materials by gas-liquid mixing and high-pressure atomization
A technology of high-pressure atomization and gas-liquid mixing, which is applied in chemical methods, chemical instruments and methods, and chemical/physical processes for reacting liquids and gaseous media. Drops or large particles, etc., to solve the effect of incomplete and insufficient reaction, small environmental impact, and low cost
Active Publication Date: 2019-08-30
张格梅
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Problems solved by technology
[0005] Due to the extremely high melting point of refractory compounds and the characteristics of easy decomposition and non-conductivity at high temperatures, although the traditional and single gas atomization method is widely used in the production of metal powders, it is difficult to It is difficult to synthesize a complete and sufficient refractory compound powder material
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[0037] The embodiments of the present invention are described in detail below. This embodiment is implemented on the premise of the technical solution of the present invention, and provides a detailed implementation manner and a specific operation process, but the protection scope of the present invention is not limited to the following implementation. example.
[0038] like figure 1 and figure 2 As shown, the preparation process of this embodiment is as follows:
[0039] (101) heating the source metal to make it liquid;
[0040] (102) multi-stage fragmentation treatment is performed on the liquid source metal to form fine metal droplets;
[0041] (103) screening the fine metal droplets, and introducing the fine metal droplets into the compound reaction system;
[0042] (104) reacting the fine metal droplets with the reaction gas to convert the fine metal droplets into compound crystal grains;
[0043] (105) fragmenting the crystal grains of the compound to reduce the ag...
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The invention discloses a device and method for preparing a compound powder material through gas-liquid mixing high-pressure atomization. Source metal liquefying equipment is positioned above a gas-liquid mixing high-pressure atomization screening system, the gas-liquid mixing high-pressure atomization screening system is connected to a spherical reaction furnace positioned on the side of the gas-liquid mixing high-pressure atomization screening system, the interior of the spherical reaction furnace is connected to reaction gas, a crystalline grain fragmentation processor is positioned at theupper part and the bottom of an inner container of the spherical reaction furnace, gas circulation cooling equipment is positioned below the spherical reaction furnace, a compound powder classifier ispositioned at the tail of the gas circulation cooling equipment, and a fine powder staticizing sedimentation system is positioned at the back of the compound powder classifier. The device has the advantages of high efficiency, low cost and little environmental influence, the prepared compound powder material has the characteristics of high purity, small and uniform particles and the like, and theproblem that the refractory compound powder material is synthesized is effectively solved.
Description
technical field [0001] The invention relates to a powder metallurgy technology, in particular to a device and method for preparing compound powder materials by gas-liquid mixing high-pressure atomization. Background technique [0002] Refractory compound materials, because of their unique physical characteristics and working characteristics, are widely used in various fields, such as automobiles, metallurgy, electronics, and chemical industries. Taking nitrogen compounds as an example, boron nitride (BN) can be used as a lubricant for high temperature resistance, cutting tools and crucible materials, etc.; titanium nitride (TiN) is a ceramic material with extremely high hardness, often used as a coating Materials; Aluminum Nitride (AlN) is the most ideal insulation and heat dissipation material in optoelectronic device packaging because it is non-toxic and non-conductive and has a thermal conductivity comparable to that of copper; Gallium Nitride (GaN)-based alloys are blue ...
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IPC IPC(8): B01J10/00B01J19/18B03C3/017
Inventor 张格梅
Owner 张格梅