Method for preparing thin film
A technology of thin film and silicon oxide layer, applied in the field of preparation of SOI wafers, can solve the problems of difficult to produce materials with good thermal stability, low substrate surface resistivity, difficult to control, etc. Effect of defect density, low manufacturing cost
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[0031] This embodiment provides a method for preparing a thin film, the thin film refers to an SOI sheet with an amorphous silicon layer, and its preparation includes the following steps:
[0032] 1. Provide high-resistance silicon wafers (silicon wafer resistivity greater than 1000ohm.cm), and use DHF, SC1 and SC2 to clean the surface in order to remove the natural oxide layer and pollutants on the silicon wafer surface; use testing equipment to test the silicon wafer surface Particle situation, silicon wafers that meet the requirements, proceed to the next step ( figure 1 (a)).
[0033] 2. Reference figure 1 (b), prepare a silicon oxide layer on the surface of the high-resistance silicon wafer, and the thickness of the grown oxide layer is about 200A; the preparation process is: place the high-resistance silicon wafer in an oxidation furnace, and the oxidation temperature is about 1100 ° C; and then sequentially Clean with SC1 and SC2 to remove surface pollutants. Use the...
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