Etching fluid for silver nanowire conducting film and application method thereof
A silver nanowire and conductive film technology, which is applied in the field of etching solution, can solve the problems of high preparation temperature and high price, and achieve the effects of high light transmittance, low cost and low environmental pollution
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Embodiment 1
[0021] Embodiment 1 An etching solution for a silver nanowire conductive film, characterized in that the etching solution components and mass percentages are as follows:
[0022] Acetic acid: 30%;
[0023] Ammonia: 10%;
[0024] Ferric acetate: 20%;
[0025] Hydrogen peroxide: 16%;
[0026] Modified cellulose: 3%;
[0027] Silica: 4%;
[0028] Carboxymethylcellulose: 3%;
[0029] Ethylene glycol: 2%;
[0030] Deionized water: 12%.
[0031] A method of using an etching solution for the above-mentioned silver nanowire conductive film, characterized in that the silver nanowire conductive film is immersed in the above-mentioned etching solution, placed at room temperature for 15 minutes, and then the silver nanowire conductive film is cleaned with pure water, The silver nanowire conductive film is air-dried or dried.
Embodiment 2
[0032] Embodiment 2 An etching solution for a silver nanowire conductive film, characterized in that the etching solution components and mass percentages are as follows:
[0033] Acetic acid: 10%;
[0034] Ammonia: 5%;
[0035] Ferric acetate: 10%;
[0037] Modified cellulose: 15%;
[0038] Silica: 4%;
[0039] Carboxymethylcellulose: 3%;
[0040] Ethylene glycol: 17%;
[0041] Deionized water: 30%.
[0042] A method for using the etching solution for the above-mentioned silver nanowire conductive film, characterized in that, the silver nanowire conductive film is immersed in the above-mentioned etching solution, placed at room temperature for 10 minutes, and then the silver nanowire conductive film is cleaned with pure water, The silver nanowire conductive film is air-dried or dried.
Embodiment 3
[0043] Embodiment 3 An etching solution for a silver nanowire conductive film, characterized in that the etching solution components and mass percentages are as follows:
[0044] Acetic acid: 20%;
[0045] Ammonia: 8%;
[0046] Ferric acetate: 10%;
[0047] Hydrogen peroxide: 8%;
[0048] Modified cellulose: 12%;
[0049] Silica: 4%;
[0050] Carboxymethylcellulose: 3%;
[0051] Ethylene glycol: 5%;
[0052] Deionized water: 30%.
[0053] A method of using the etching solution for the above-mentioned silver nanowire conductive film, characterized in that, the silver nanowire conductive film is immersed in the above-mentioned etching solution, placed at room temperature for 5 minutes, and then the silver nanowire conductive film is cleaned with pure water, The silver nanowire conductive film is air-dried or dried.
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Abstract
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