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Su-8 photoresist film with micro-cone holes and preparation method and application

A SU-8, photoresist technology, applied in the photoengraving process of pattern surface, photoengraving process coating equipment, optics, etc., can solve the problems of damaged structure, difficult to guarantee the alignment accuracy, etc., to simplify the manufacturing Process, not easy to fall off and block, the effect of strong applicability

Active Publication Date: 2020-07-17
DALIAN UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bonding of silicon needs to be carried out at 1200°C. Higher temperatures are likely to cause structural damage. In addition, it is difficult to ensure the alignment accuracy between the upper and lower silicon wafers.

Method used

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  • Su-8 photoresist film with micro-cone holes and preparation method and application
  • Su-8 photoresist film with micro-cone holes and preparation method and application
  • Su-8 photoresist film with micro-cone holes and preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Such as figure 1 Shown, the preparation method of the SU-8 photoresist film that has the miniature taper hole of the present embodiment, comprises the steps:

[0042] 1. Preparation of a substrate with a PDMS layer

[0043] After cleaning the PMMA substrate 2 with deionized water, heat to remove moisture, and use aluminum foil tape to seal the edges around the PMMA substrate 2, and form a solution cavity for holding the PDMS solution on the PMMA substrate 2;

[0044] Prepare a PDMS solution containing a curing agent, stir it evenly, and then vacuumize it at about 50Pa for about 6 minutes to remove the air bubbles in the PDMS solution;

[0045] The prepared PDMS solution is poured into the solution cavity on the PMMA substrate 2, and then vacuumized at about 50 Pa for about 6 minutes, and the above-mentioned vacuuming process is repeated until there are no air bubbles in the solution cavity on the PMMA substrate 2;

[0046] Heating at about 65°C for about 120min, the P...

Embodiment 2

[0060] The preparation method of the SU-8 photoresist film that has the miniature taper hole of the present embodiment, comprises the steps:

[0061] 1. Preparation of a substrate with a PDMS layer

[0062] After cleaning the PMMA substrate with deionized water, heat to remove moisture, and use aluminum foil tape to seal the edges around the PMMA substrate to form a solution cavity for holding the PDMS solution on the PMMA substrate;

[0063] Prepare a PDMS solution containing a curing agent, stir it evenly, and then vacuumize it at about 250Pa for about 10 minutes to remove the air bubbles in the PDMS solution;

[0064] The prepared PDMS solution is poured into the solution chamber on the PMMA substrate, then vacuumized at about 250Pa for about 10 minutes, and the above vacuuming treatment is repeated until there are no bubbles in the solution chamber on the PMMA substrate;

[0065] Heat at about 85° C. for about 30 minutes to solidify the PDMS solution to form a PDMS layer,...

Embodiment 3

[0079] The preparation method of the SU-8 photoresist film that has the miniature taper hole of the present embodiment, comprises the steps:

[0080] 1. Preparation of a substrate with a PDMS layer

[0081] After cleaning the PMMA substrate with deionized water, heat to remove moisture, and use aluminum foil tape to seal the edges around the PMMA substrate to form a solution cavity for holding the PDMS solution on the PMMA substrate;

[0082] Prepare a PDMS solution containing a curing agent, stir it evenly, and vacuum it at about 150Pa for about 8 minutes to remove the air bubbles in the PDMS solution;

[0083] The prepared PDMS solution is poured into the solution chamber on the PMMA substrate, then vacuumized at about 150Pa for about 8 minutes, and the above vacuuming treatment is repeated until there are no bubbles in the solution chamber on the PMMA substrate;

[0084] Heat at about 75° C. for about 75 minutes to solidify the PDMS solution to form a PDMS layer, and obtai...

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Abstract

The invention provides an SU-8 photoresist film with micro taper holes as well as a preparation method and an application. The preparation method of the SU-8 photoresist film with micro taper holes sequentially comprises steps as follows: a substrate with a PDMS layer is coated with an SU-8 photoresist, and pre-baking is performed; a mask is adopted for clearance exposure, and post-baking is performed, so that the SU-8 photoresist layer is in a weak crosslinked state; developing is performed, the SU-8 photoresist film with micro taper holes is obtained after the SU-8 photoresist layer is stripped from the PDMS layer. The SU-8 photoresist film has bonding capacity, so that the film can be directly in bonding connection with a chamber wall without a binder, the process for manufacturing a printing head with the SU-8 photoresist film is simple, and orifices cannot fall off and be blocked easily.

Description

technical field [0001] The invention relates to a photoresist film, in particular to a SU-8 photoresist film with micro-cone holes, a preparation method and an application. Background technique [0002] SU-8 photoresist is a negative photoresist with near ultraviolet light. Under the action of ultraviolet light, the double bonds in the photoresist molecule are opened, and the chains are cross-linked to form a An insoluble cross-linked network structure. Because SU-8 photoresist has good physical and photoplastic properties, it is widely used in MEMS field. [0003] Existing print heads usually use specific processing methods to process taper holes with a diameter of 20-50 microns on the alloy, and usually use adhesives to bond the orifice plate to the chamber, which is not only complicated and expensive, but also It is easy to cause the nozzle hole to fall off. [0004] At present, epoxy resin can be used as a bonding agent to bond the orifice plate and the chamber (such ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/62G03F7/26G03F7/16
CPCG03F1/62G03F7/16G03F7/26
Inventor 邹赫麟冯建波周毅伊茂聪魏宏芳
Owner DALIAN UNIV OF TECH