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Multi-film absolute clearance measurement device and method based on white light interference information matching

A technology of white light interference and measurement method, which is applied in measurement devices, optical devices, photolithographic process exposure devices, etc., can solve the problems of difficulty in ensuring the parallelism of the mask and the substrate, and the gap is difficult to quantify and control, so as to solve the gap. The effect of detecting difficult problems, improving gap detection accuracy, and expanding gap detection range

Active Publication Date: 2018-06-05
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: to overcome the deficiencies of the prior art, and to propose an absolute gap detection method of a multi-layer film structure using white light interference signal intensity to solve the problem that the gap between the mask and the substrate is difficult to quantify and control during the exposure process. Difficult to guarantee the parallelism between slices

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  • Multi-film absolute clearance measurement device and method based on white light interference information matching
  • Multi-film absolute clearance measurement device and method based on white light interference information matching
  • Multi-film absolute clearance measurement device and method based on white light interference information matching

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Embodiment 1

[0030]Embodiment 1, measure the embodiment where the air gap between the mask and the substrate is >10 μm.

[0031] 1. Select a sapphire with a diameter of 30mm and double-sided fine polishing as a transparent substrate, and use a nano-processing method on this transparent substrate to obtain a Cr mask with a measurement hole structure, and the thickness of the Cr mask is 40nm;

[0032] 2. Choose quartz with a diameter of 25.4mm as the transparent substrate, deposit the bottom Ag layer on this substrate by process, then spin-coat the photoresist, and finally deposit the top reflective silver layer on the photoresist. The thickness of the bottom silver film is controlled at 50nm, the thickness of the photoresist is controlled at 30nm, and the thickness of the top silver film is controlled at 20nm;

[0033] 3. Establish the model of the second step structure, use white light as the light source, use the white light interference spectrum information corresponding to the air gap t...

Embodiment 2

[0039] Embodiment 2, the embodiment where the air gap value between the mask and the substrate is measured <10 μm.

[0040] 1. Select a sapphire with a diameter of 30mm and double-sided fine polishing as a transparent substrate, and use a nano-processing method on this transparent substrate to obtain a Cr mask with a measurement hole structure, and the thickness of the Cr mask is 40nm;

[0041] 2. Choose quartz with a diameter of 25.4mm as the transparent substrate, deposit the bottom Ag layer on this substrate by process, then spin-coat the photoresist, and finally deposit the top reflective silver layer on the photoresist. The thickness of the bottom silver film is controlled at 50nm, the thickness of the photoresist is controlled at 30nm, and the thickness of the top silver film is controlled at 20nm;

[0042] 3. Establish the model of the second step structure, use white light as the light source, use the white light interference spectrum information corresponding to the a...

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Abstract

The invention discloses a multi-film absolute clearance measurement device and method based on white light interference information matching. The device comprises a worktable, a vacuum adsorption device, a substrate, a to-be-measured mask, a half-transparent and half-reflecting mirror group, a white light source, a collimating lens, a spectrograph, an optical fiber, an optical fiber coupling unitand a computer. By utilizing an interference property of the white light source, the computer can acquire interference light density distribution information from the spectrograph and carry out digital signal processing on light density information. The white light interference light density distribution of a multi-layer film is solved by virtue of an RCWA method, and an interference light densitydistribution database is established. The computer reads spectroscopic data from the database and makes comparison on cached spectrums and to-be-tested spectrums one by one so as to solve a clearancevalue. The multi-film absolute clearance measurement device is simple in structure, high in clearance detection precision and strong in anti-jamming capability.

Description

technical field [0001] The invention relates to the technical field of precisely controlling the gap between a mask and a substrate, in particular to a multilayer film absolute gap measurement device and method based on white light interference information matching. Background technique [0002] When making micro-nano structures, the exposure process of optical lithography is the main processing method, which directly determines the manufacturing accuracy of micro-nano structures. Since traditional optical systems cannot transmit evanescent waves, their resolution is limited by the diffraction limit and can only reach half-wavelength scale. The SP exposure process uses a long wave with a wavelength of 365nm as the light source, realizing the imaging capability beyond the diffraction limit. It has a good application prospect in the manufacture of semiconductor devices and nano-optical components, and is a low-cost, high-efficiency processing technology. Metamaterials in the...

Claims

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Application Information

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IPC IPC(8): G03F7/20G01B11/14
CPCG01B11/14G03F7/70483
Inventor 罗先刚刘明刚马晓亮高平蒲明博
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI