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Thin power module suitable for high frequency application

A power module, thin technology, applied in the direction of output power conversion device, AC power input conversion to DC power output, high-efficiency power electronic conversion, etc., can solve problems such as chip breakdown, burning modules, etc.

Active Publication Date: 2018-06-05
南京银茂微电子制造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the distributed inductance is too high, the total voltage superimposed on the bus voltage, if it exceeds the withstand voltage value of the silicon carbide MOSFET chip, will cause the breakdown of the chip and burn the module

Method used

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  • Thin power module suitable for high frequency application
  • Thin power module suitable for high frequency application
  • Thin power module suitable for high frequency application

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Embodiment Construction

[0020] The invention is a power module suitable for high-frequency applications. It balances the distributed inductance of the gate control loop and power loop of each chip for wide band gap semiconductor chips, such as silicon carbide MOSFETs, so that when the module is turned on, The current borne by each chip is basically balanced, and when the module is turned off, the voltage borne by each chip is also basically balanced. The present invention is described with the most common half-bridge power module. Such as figure 1 As shown, the half-bridge power module contains two silicon carbide MOSFET power units, a high-side MOSFET1 and a low-side MOSFET2. In actual work, the silicon carbide MOSFETs of the upper and lower bridge arms are switched on and off alternately to control the output current. The gate loop of the upper arm is G1-S1, and the gate loop of the lower arm is G2-S2. The corresponding upper bridge arm power circuit is positive P, and the lower bridge arm power c...

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PUM

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Abstract

The invention discloses a thin power module suitable for high frequency application. The thin power module comprises a thermal base plate, copper clad substrates and chips; the chips are connected with each other and connected with copper sheets through bonding wires; the front surface of the module is provide with an output terminal, a positive pole power terminal and a negative pole power terminal; the back surface of the module is provided with signal terminals; the chips are divided into an upper arm group and a lower arm group; upper arms and lower arms are in bilateral symmetry; each armincludes an even number of parallel-connected power units, wherein the power units are in longitudinal symmetry; each of the positive pole power terminal and the negative pole power terminal is provided with two pins; the pins of the terminals are in bilateral symmetry; the two pins of each power terminal are welded onto the copper sheet of the copper clad substrate in a longitudinal symmetry manner; and the power terminals are of bent vertical stack structures in the module. Whit the above structure adopted, the thickness of the power module can be reduced, and distributed inductance can bereduced and equalized.

Description

Technical field [0001] The invention belongs to the technical field of power semiconductor devices, and specifically relates to a design and realization method of a thin silicon carbide (SiC) or other types of MOSFET modules suitable for high frequency applications. Background technique [0002] Silicon carbide MOSFET is a wide-bandgap semiconductor. It not only can withstand high voltage and provide large current, but also is easy to control. At the same time, it has a higher allowable temperature. It is an important power device for a new generation of motor control and power inverter. Moreover, compared with silicon-based power devices, silicon carbide MOSFETs can meet higher switching frequencies (> The requirement of 50kHz) provides the possibility for the power system to further increase the power density and reduce the size. Silicon carbide MOSFET single chip, due to the limitation of the performance of silicon carbide material, the output current of a single chip usual...

Claims

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Application Information

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IPC IPC(8): H01L25/07H02M7/00
CPCH01L25/072H02M7/003H01L2224/49111Y02B70/10
Inventor 庄伟东姚二现
Owner 南京银茂微电子制造有限公司
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