Titanium-tungsten alloy etching solution
A technology of titanium-tungsten alloy and etching solution, applied in the field of etching solution, can solve the problems of reducing the etching rate of titanium-tungsten alloy, and achieve the effect of slowing down the pH value and reducing the etching time.
Active Publication Date: 2020-04-14
CHEMLEADER
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Problems solved by technology
However, as the strength of the copper corrosion inhibitor increases, the etch rate of titanium-tungsten alloys also decreases
Method used
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[0031] The etching solution of the titanium-tungsten alloy of the preferred embodiment of the present invention is made up of following different components: the hydrogen peroxide of 23.7 weight percent; The potassium hydroxide of 4.47 weight percent; The polyethylene glycol (PEG) of 6 weight percent; 10 weight percent percent pH buffer containing potassium hydrogen phthalate, hydrogen chloride, and sodium hydroxide; the remainder being deionized water. Next, the titanium-tungsten alloy layer in an under bump metallization (UBM) layer is etched with the titanium-tungsten alloy etchant of the embodiment.
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The invention discloses an etching solution for a titanium-tungsten alloy. The etching solution for the titanium-tungsten alloy is prepared from, in percentage by weight, a) 10%-32% of an oxidizing agent, b) 1.32%-6.78% of a pH regulator, c) 0.1%-14% of a copper corrosion inhibitor, d) 2%-14% of a pH buffer agent and e) 35%-66% of water. The pH value of the etching solution can be effectively reduced in the etching period of the titanium-tungsten alloy by adding the pH buffer agent to the etching solution for the titanium-tungsten alloy, and accordingly, copper metal cannot be corroded by theetching solution due to reduction of the pH value.
Description
technical field [0001] The invention relates to an etching solution, in particular to an etching solution for a titanium-tungsten alloy. Background technique [0002] See figure 1 , in the existing semiconductor package bump (flip chip bump) process, it is necessary to sputter an under bump metallization (Under Bump Metallization, UBM) layer 10 as a conductive layer when the bump 20 is electroplated. The under bump metallization (UBM) layer 10 includes a seed layer 101 (made of copper) and an adhesion layer 102 (made of titanium or titanium-tungsten alloy) in order from top to bottom. After the bumps 20 are electroplated, the under-bump metallization (UBM) layer 10 of the electroless plating structure must be removed by wet etching. First, the upper seed layer 101 is removed by etching, and then the lower exposed adhesion layer 102 is removed. [0003] Generally for the etching of titanium-tungsten alloy, as disclosed in Taiwan Patent Publication No. I369724, etching is c...
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IPC IPC(8): C23F1/26
CPCC23F1/26
Inventor 张孝羽黄芊宁洪秋明钟时俊
Owner CHEMLEADER