Semiconductor chip bonding assembly manufacturing method

Abstract

The invention provides a manufacturing method for a bonding component of a semiconductor chip. The manufacturing method comprises the steps that bonding blocks are formed on the surface of a semiconductor substrate; a passivation layer is formed on the surface of the semiconductor substrate, the bonding blocks are covered with the passivation layer, and the passivation layer is a composite membrane layer comprising multiple passivation material membrane layers; the multiple passivation material membrane layers of the passivation layer are sequentially etched to form inverted trapezoidal openings in the portions, corresponding to the bonding blocks, of the passivation layer; and metal thickening layers are formed on the surfaces of the bonding blocks by means of the inverted trapezoidal openings. According to the scheme, the thickening problem of the bonding blocks can be solved, the process feasibility can be improved, and the process cost can be reduced.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a method for manufacturing a pressure-bonding component of a semiconductor chip. 【Background technique】 [0002] In recent years, gold wire packaging has gradually increased, and packaging factories have begun to shift to copper wire packaging. Copper wire packaging has a series of advantages such as low price, low resistivity, and high thermal conductivity. However, the hardness of the copper wire is higher, and the wire bonding strength is much greater than that of the gold wire and the aluminum wire, and the requirements for the thickness of the metal layer of the pressure soldering block are correspondingly increased. Due to the limitations of photolithography alignment and control of etching line width, it is difficult for chip manufacturers to simply increase the thickness of the metal layer to meet the needs of customers for copper wiring. [0...

AI Technical Summary

Problems solved by technology

[0005] Although this method can thicken the metal layer on the pad, it still has some obvious defects: after the metal layer grows on the surface of the passivation layer, it is necessary to perform photolithography and etching on the metal layer, which increases the cost. and process complexity

This brings a certain threshold for the popularization and application of the process;

[0008] (2) The photoresist morphology of the stripping process is an inverted trapezoid, but the inclination angle of this inverted trapezoid will not be very large, which may cause the subsequent growth of a thickened metal layer. disconnect

Therefore, the efficiency of stripping is greatly affected, and it is basically impossible to strip smoothly.

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