Atomic bonding-based on-chip microflow cooling GaN crystal tube and manufacturing method thereof

Abstract

The invention discloses an atomic bonding-based on-chip microflow cooling GaN crystal tube and a manufacturing method thereof. The GaN crystal tube sequentially comprises an active region functional layer, a barrier layer, a buffer layer and a substrate from top to bottom, wherein a micro fluid passage is arranged in the substrate, is arranged below the active region functional layer and is formedby an atomic bonding process, and a micro fluid is arranged in the micro fluid passage. A fluid cooling technology is introduced to a chip by the atomic bonding technology, atomic bonding employs anoxide or nitride medium, the thickness of a bonding layer is several nanometers, the thermal resistance of the bonding package layer is effectively reduced, the high-efficiency cooling performance ofthe chip is achieved, and heat accumulation of the large-power GaN device is solved; and compared with a traditional GaN device, the GaN crystal tube has the advantages that the power density can be improved by over two times, the maximum output power of the device is greatly improved, and relatively high reliability is maintained.

Description

technical field [0001] The invention belongs to the technical field of thermal management development of power devices, in particular to an atomic-bonding-based on-chip microfluidic heat dissipation gallium nitride transistor and a manufacturing method thereof. technical background [0002] The third-generation semiconductor power devices represented by GaN have demonstrated their excellent high-power application characteristics. In practical applications, GaN power chips are mostly SiC substrates, and the power density of their power devices has only reached its theoretical level. One-fifth of the value, GaN's high-power characteristics are far from being brought into play. This is mainly because high-power microwave devices will generate a large amount of heat accumulation while outputting high power, especially for microwave power devices with an output power of hundreds of watts or even thousands of watts, which will cause a sharp rise in the junction temperature of the ...

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Problems solved by technology

This is mainly because high-power microwave devices will generate a large amount of heat accumulation while outputting high power, especially for microwave power devices with an output power of hundreds of watts or even thousands of watts, which will cause a sharp rise in the junction temperature of the device and cause its device Severe degradation in performance and reliability

[0003] At present, GaN-based power devices are mainly epitaxially grown on substrate materials such as silicon carbide and sapphire, and these substrate materials have low thermal conductivity. The heat dissipation problem seriously limits the performance of GaN devices. Some researches are based on diamond substrate, but the technology is still in the research and development stage, so the thermal management development of gallium nitride semiconductor devices has become a technical bottleneck to solve its high-power applications

Especially in view of the special needs of the current equipment system for ultra-high power and highly integrated devices, the existing passive heat dissipation technology cannot solve the problem of heat accumulation in the active area of ​​the system chip due to its own physical characteristics

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