Silicon carbide suspension junction metal-oxide-semiconductor field-effect transistor (MOSFET) device having surrounding deep groove protection ring and grounding ring

Abstract

The invention discloses a silicon carbide suspension junction metal-oxide-semiconductor field-effect transistor (MOSFET) device having a surrounding deep groove protection ring and a grounding ring. One or more layers of uniform discrete structures which are buried and comprise a plurality of suspension P+ regions are arranged in an epitaxial layer of the device, a plurality of deep groove protection structures are arranged at a surrounding JTE of the device or between a field limitation ring and a scribing channel, and the deep groove protection structures vertically penetrate through the uniform discrete structures. The buried suspension structures and the surrounding deep-groove protection structures connected with the buried suspension structures are combined in a silicon carbide MOSFET device cell, the pressure-resistant capability and the interference-resistant capability of the suspension junction MOSFET device can be further improved, and the edge electric leakage is reduced. Asurrounding deep groove of the device structure also can be used as an active region in a seal ring protection chip, a scribing damage crack is ended in a groove region, the corrosion of moisture andions to the active region of the chip also can be favorably prevented by a plurality of deep-groove protection rings, and the reliability of the device is favorably improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a silicon carbide suspension junction MOSFET device with a peripheral deep trench protection ring and a grounding ring. Background technique [0002] SiC is a wide bandgap semiconductor material that has developed rapidly in the past ten years. Compared with other semiconductor materials, such as Si, GaN and GaAs, SiC material has wide bandgap, high thermal conductivity, high carrier saturation mobility, high power density and other advantages. SiC can be thermally oxidized to form silicon dioxide, making it possible to realize power devices and circuits such as SiC MOSFETs and SBDs. Since the 1990s, power devices such as SiC MOSFETs and SBDs have been widely used in switching regulated power supplies, high-frequency heating, automotive electronics, and power amplifiers. [0003] At present, silicon carbide MOSFET devices, especially high-voltage MOSFET devices, t...

AI Technical Summary

Problems solved by technology

This will cause the buried suspension structure device to withstand the reverse high voltage, the space depletion layer of the floating buried layer will inevitably overlap with the scribing lane with high defect density, resulting in an increase in the reverse leakage of the device. The purpose of the present invention is to propose A way to solve this problem

Images