Polycrystalline gallium-doped back passivation solar cell and preparation method thereof

A solar cell and back passivation technology, which is applied in the field of solar cells, can solve the problems of reducing the lifetime of minority carriers, reducing the efficiency of solar cells, reducing the diffusion length of minority carriers, etc., and achieving the effect of light attenuation control

Pending Publication Date: 2018-06-15
LONGI SOLAR TECH (TAIZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The boron-oxygen complex is a deep-level recombination center, which will reduce the lifetime of minority carriers, thereby reducing the diffusion length of minority carriers, resulting in a decrease in the efficiency of solar cells

Method used

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  • Polycrystalline gallium-doped back passivation solar cell and preparation method thereof
  • Polycrystalline gallium-doped back passivation solar cell and preparation method thereof
  • Polycrystalline gallium-doped back passivation solar cell and preparation method thereof

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preparation example Construction

[0043] A method for preparing a solar cell of the present invention comprises the following steps:

[0044] 1) Surface texturing and cleaning the gallium-doped silicon substrate; the surface texturing process is an acid texturing process, or reactive ion etching texturing, or silver ion assisted texturing.

[0045] 2) Prepare the emitter;

[0046] 3) Perform edge insulation treatment; the insulation treatment method is a wet etching method, and the wet etching method includes the use of HNO-containing 3 , HF mixed acidic solution or chemical etching method using alkaline solution containing potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, etc.

[0047] 4) Preparation of passivation anti-reflection film on the front side and preparation of passivation film on the back side;

[0048] 5) Perform local film opening on the back passivation film; the local film opening process of the passivation film can use chemical etching slurry to form local contact patter...

Embodiment 1

[0053] The first step is to texture the surface of the polycrystalline gallium-doped silicon wafer; the width of the gallium-doped silicon wafer is 156.75mm, the diameter is 220mm, the silicon wafer does not contain boron, and the concentration of gallium is 2×10 16 atoms / cubic centimeter. For this, the polycrystalline gallium-doped silicon wafer is textured by using HF / HNO3 solution in a chain cleaner to form a pyramid structure on the surface. The temperature of the solution is 7°C, and the duration is 1-5min. And after KOH cleaning, HF pickling, water washing, drying and other steps, the surface metal ions are removed.

[0054] The second step is to prepare the emitter. The preparation of the pn junction is completed in the tubular heating diffusion furnace tube, using N2 to carry the POCl3 source. The diffusion peak temperature was 850°C, and the diffusion time was 110 minutes.

[0055] The third step is to carry out insulation treatment. The insulation treatment is c...

Embodiment 2

[0061] The first step is to texture the surface of the polycrystalline gallium-doped silicon wafer; the gallium-doped silicon wafer has a side-to-side distance of 156 mm and a diameter of 210 mm. The silicon wafer substrate contains boron, and the concentration of boron is 3×10 15 atoms / cm3, containing gallium at a concentration of 3×10 15 atoms / cubic centimeter. For this, the polycrystalline gallium-doped silicon wafer is textured by using HF / HNO3 solution in a chain cleaner to form a pyramid structure on the surface. The temperature of the solution is 7°C, and the duration is 1-5min. And after KOH cleaning, HF pickling, water washing, drying and other steps, the surface metal ions are removed.

[0062] The second step is to prepare the emitter. The preparation of the pn junction is completed in the tubular heating diffusion furnace tube, using N2 to carry the POCl3 source. The diffusion peak temperature is 830°C, and the diffusion time is 90 minutes.

[0063] The third ...

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Abstract

The invention discloses a polycrystalline gallium-doped back passivation solar cell and a preparation method thereof. The polycrystalline gallium-doped back passivation solar cell comprises a polycrystalline gallium-doped silicon substrate doped with a gallium element, an emitter, a back surface field, a front anti-reflection film / passivation film arranged on the surface of the emitter, a back passivation film arranged on the back surface of the substrate, a front electrode and back electrodes, wherein the emitter and the back surface field are arranged on the polycrystalline gallium-doped silicon substrate; the front electrode is arranged on the surface of the front anti-reflection film / passivation film and is prepared from a conductive material; and the back electrodes are arranged on the surface of the back passivation film and are prepared from the conductive material. The preparation method of the polycrystalline gallium-doped solar cell comprises the processes of completing surface texturing on a gallium-doped silicon wafer; preparing the emitter; carrying out insulating treatment; preparing the front anti-reflection film / passivation film and the back passivation film; locally opening the back passivation film; and carrying out metallization.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a polycrystalline gallium-doped rear passivated solar cell and a preparation method thereof. Background technique [0002] At present, with the gradual depletion of fossil energy, solar cells are used more and more widely as a new energy alternative. A solar cell is a device that converts the sun's light energy into electrical energy. Solar cells use the principle of photovoltaics to generate carriers, and then use electrodes to extract the carriers, which is beneficial to the effective use of electrical energy. [0003] Currently used p-type solar cell substrates are generally silicon wafers doped with boron. However, the efficiency of solar cells using polysilicon doped with boron as the substrate will be attenuated to a certain extent under sunlight. This attenuation is called light decay (LID). At present, the efficiency decay of the back passivated solar cells made o...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/049H01L31/0224H01L31/18
CPCH01L31/02168H01L31/022425H01L31/022441H01L31/049H01L31/1804Y02E10/547Y02P70/50
Inventor 李华靳玉鹏
Owner LONGI SOLAR TECH (TAIZHOU) CO LTD
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