7results about How to "Control fever" patented technology

The invention discloses a rapid heating wavelength-adjustable laser chip integrated with a heat insulation pad and a preparation method, the rapid heating wavelength-adjustable laser chip comprises an epitaxial structure, a passivation layer, P-surface metal and N-surface metal, and the epitaxial structure comprises a substrate layer, a lower limiting layer, an active layer and an upper limiting layer from bottom to top in sequence; the active layer is set to be a passive area and an active area along the cavity length direction, a grating structure is arranged in the upper limiting layer, and the grating structure is arranged corresponding to the passive area and avoids the active area; the part, corresponding to the passive area, in the lower limiting layer is sacrificed to form a cavity, and a heat insulation material grows and is filled in the cavity to form a heat resistance cushion layer; and a ridge waveguide is formed on the front surface of the epitaxial structure. The heating efficiency of the chip is improved, the heating temperature can be accurately adjusted, and the overall structural strength of the chip is high.

The invention provides a heat dissipation device and an electronic device, the heat dissipation device comprises a circuit board, a heat source device and a liquid cooling plate, and the heat source device is fixedly installed on the circuit board; the liquid cooling plate comprises a first cover plate, a second cover plate and a middle plate clamped between the first cover plate and the second cover plate, the side, close to the first cover plate, of the middle plate is sunken to form a first containing space, the side, close to the second cover plate, of the middle plate is sunken to form a second containing space, and the liquid cooling plate further comprises a heat dissipation piece arranged in the first containing space. The first accommodating space is filled with phase change liquid; a liquid inlet hole and a liquid outlet hole which are communicated with the second accommodating space are formed in the middle plate; the liquid cooling plate further comprises a liquid inlet pipe and a liquid outlet pipe which are communicated with the second accommodating space through the liquid inlet hole and the liquid outlet hole; the second accommodating space is filled with cooling liquid; a receding hole isolated from the second containing space is formed in the second cover plate, and the heat source device penetrates through the receding hole to be attached to the middle plate. Compared with the prior art, the heat dissipation performance of the heat dissipation device is better.

The invention discloses a storage device and an electronic device. In embodiments of the disclosed technology, a heat generation control equation used in changing power modes of heat generation control of components included in an electronic device (e.g., a storage device) is used by differently setting for each power mode. Accordingly, it is possible to perform heat generation control that accurately reflects the relationship between the temperature change of the component in each power mode and the temperature value obtained by the temperature sensor. Accordingly, performance degradation due to unnecessary heat generation control may be prevented by effective heat generation control, and operating performance of the memory device may be improved.

The invention provides an inner cavity VCSEL epitaxial structure, and belongs to the technical field of semiconductor lasers, the inner cavity VCSEL epitaxial structure comprises an epitaxial wafer, the epitaxial wafer comprises a GaAs substrate, an n-region undoped DBR, an n-type DBR, a quantum well active region, an oxide layer, a p-type DBR and a p-region undoped DBR, a thicker In0. 49Ga0. 51P layer matched with a GaAs substrate lattice is inserted between distributed Bragg reflectors on the two sides of the active region, and the quantum well active region is provided with an N-region undoped DBR, an N-region undoped DBR, an N-region undoped DBR, an N-region undoped DBR and an N-region undoped DBR. The layer is exposed by etching and then an ohmic contact electrode is fabricated thereon to form inner cavity contact. The number of pairs of serially connected DBRs is reduced through inner cavity contact, and the series resistance of the chip can be greatly reduced. In addition, the band gap width of the In0. 49Ga0. 51P layer is 1.88 eV which is much larger than 1.42 V of GaAs, and the In0. 49Ga0. 51P layer does not contain an aluminum component which is easy to oxidize, so that the defect that an AlGaAs inner cavity contact layer is easy to oxidize when exposed and the negative effect that GaAs is easy to absorb in short-wave band light are improved. By adopting the structure, the series resistance and heating of the device can be more flexibly controlled, and the photoelectric conversion efficiency and reliability of the chip are better.

The utility model discloses an intelligent operation and maintenance box, which relates to the field of intelligent power systems and comprises a box body, a mounting frame is slidably arranged in the box body, and the mounting frame can be pulled out of the box body; a plurality of sliding rails are arranged on the two sides of the inner wall of the mounting frame, a movable plate is arranged between the two sliding rails in a sliding mode, and a plurality of mounting holes are formed in the movable plate and a top plate and a bottom plate of the mounting frame and used for mounting power supply and distribution equipment. The beneficial effects are that the installation frame is pulled out of the box body to obtain a larger operation space, and the movable plate is pulled out of the installation frame to further improve the operation space of a worker, thereby facilitating the installation or disassembly of power supply and consumption equipment on the movable plate, and facilitating the arrangement of wire harnesses; the opening formed in the side face of the mounting frame allows the hand of a worker to penetrate into the mounting frame for mounting and dismounting operation, the problem that operation of the worker is affected due to the small space in the box body and the large sight blind area is solved, and therefore the equipment maintenance efficiency can be remarkably improved.

This disclosure provides a sensing device, comprising: a first pixel including a first SPAD unit configured to sense light in a first wavelength range to measure depth, wherein the first SPAD unit includes one or more SPADs; a second pixel including a second SPAD unit configured to sense light in a second wavelength range, wherein the second SPAD unit includes one or more SPADs; and a voltage source coupled to the first SPAD unit and the second SPAD unit, configured to apply a first bias voltage to the SPADs of the first SPAD unit and a second bias voltage to the SPADs of the second SPAD unit, wherein the first bias voltage is different from the second bias voltage. Through embodiments of this disclosure, depth information can be measured, and other information about the surrounding environment can also be sensed. Furthermore, by making the first bias voltage different from the second bias voltage, overall power consumption and heat generation can be effectively controlled while meeting measurement requirements.

This application provides an electrostatic adsorption system and an ESC heating circuit and heating method. Since all heating devices are arranged in an n×m array, the first ends of the m heating devices in the same row are connected to the same row's leads, and the first ends of the n heating devices in the same column are connected to the same column's leads, a total of n+m leads are required, thus reducing the number of leads for the heating devices. Furthermore, since the two ends of each heating device are respectively connected to the two poles of a first power supply through two connected switching transistors, and when the heating device has a heating demand, both the first and second switching transistors connected to the heating device are controlled to conduct, the heating device heats up when it has a heating demand, thus controlling the heating of each heating device. In summary, this heating circuit can reduce the number of leads for the heating devices while controlling the heating of each heating device.