A kind of flash corrosion potion suitable for msap process

A potion and flash etching technology, applied in chemical/electrolytic methods to remove conductive materials, printed circuits, electrical components, etc., can solve problems such as complex control, reduced reliability, and insufficient etching efficiency, and achieve simple processes and reliability High, manageable results

Active Publication Date: 2020-08-28
SHENZHEN BANMING SCI & TECH CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the types and effects of flash corrosion potions are limited, and the etching efficiency is insufficient. The line width and line spacing of etching lines are generally as low as 45 μm / 45 μm, and the reliability is greatly reduced if it is lower than this value. High, lengthy process, complicated management and control

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] This embodiment provides a kind of flash corrosion potion suitable for MSAP process, which is used in the etching process of fine lines, and the flash corrosion potion includes a solvent, a revetment agent for protecting the side wall of the circuit, and a wetting agent for accelerating etching. And the stabilizing agent used to maintain the stability of the liquid medicine system, the bank revetment agent, wetting agent and stabilizing agent

[0021] All are organic matter, wherein, the bank revetment agent has The material of (thiourea) structure, in the present embodiment, described revetment agent is thiourea, i.e. R 1 , R 2 Both are H, the concentration of the bank revetment agent in the flash corrosion solution is 1000ppm, the wetting agent is ethylene glycol, and its concentration is 5000ppm, and the stabilizer is glycine, and its concentration is 100ppm.

[0022] The flash corrosion potion also includes inorganic components, and the inorganic components inclu...

Embodiment 2

[0025] This embodiment provides a kind of flash corrosion potion suitable for MSAP process, which is used in the etching process of fine lines, and the flash corrosion potion includes a solvent, a revetment agent for protecting the side wall of the circuit, and a wetting agent for accelerating etching. And the stabilizing agent used to maintain the stability of the liquid medicine system, the bank revetment agent, wetting agent and stabilizing agent

[0026] All are organic matter, wherein, the bank revetment agent has The material of (thiourea) structure, in the present embodiment, described revetment agent is N-methylthiourea, i.e. R 1 is methyl, R 2 is H, the concentration of the bank revetment agent in the flash corrosion solution is 10ppm, the wetting agent is propylene glycol, and its concentration is 100ppm, and the stabilizer is serine, and its concentration is 1ppm.

[0027] The flash corrosion potion also includes inorganic components, and the inorganic components...

Embodiment 3

[0030] This embodiment provides a kind of flash corrosion potion suitable for MSAP process, which is used in the etching process of fine lines, and the flash corrosion potion includes a solvent, a revetment agent for protecting the side wall of the circuit, and a wetting agent for accelerating etching. And the stabilizing agent used to maintain the stability of the liquid medicine system, the bank revetment agent, wetting agent and stabilizing agent

[0031] All are organic matter, wherein, the bank revetment agent has The material of (thiourea) structure, in the present embodiment, described bank protection agent is 4-pyridyl thiourea, and the concentration of described bank protection agent in flash corrosion potion is 500ppm, and described wetting agent is glycerol, its The concentration is 1000ppm, and the stabilizer is threonine, and its concentration is 50ppm.

[0032] The flash corrosion potion also includes inorganic components, and the inorganic components include Cu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a flash rusting liquid medicine applicable to an MSAP process. A banking agent and copper ions in the liquid medicine form a complex to be attached to the surface of copper, sothat base copper between circuits can spray towards the liquid in horizontal spraying equipment; a complex protection film is cracked easily to enable the base copper to be etched and dissolved, while a complex protection film on the side wall of the circuit suffers from relatively low liquid disturbance, so that copper on the side wall can be protected from corrosion; therefore, coating of an etching suppression layer before flash rusting is not needed; the banking agent can control the circuit side wall etching rate to be half of the top etching rate; by virtue of a wetting agent, the copper surface hydrophilicity is improved, so hat the etching liquid can be fully reacted with copper to achieve an etching acceleration effect; by virtue of a stabilizing agent, hydrogen peroxide can be decomposed and high in copper resistance; the flash rusting liquid medicine can process fine circuits with linewidth and line spacing of 45[mu]m or below; and in addition, high reliability is achievedin the circuit etching process, vacuum etching equipment is not needed, and low cost, simple process, and easy management and control are achieved.

Description

technical field [0001] The invention belongs to the technical field of printed circuit board production, and relates to an etching solution, in particular to a flash etching solution suitable for MSAP technology. Background technique [0002] With the rapid development of electronic devices represented by smart phones and tablet computers, electronic products are becoming more and more comprehensive in function and smaller in size, so the requirements for printed circuit boards (PCB) are getting higher and higher, and Driving the PCB industry to develop in the direction of high density, high integration, packaging, miniaturization and multi-layering, the requirements for the refinement level of PCB product lines are also getting higher and higher. At present, the line width and spacing above 75μm / 75μm have already It cannot meet the development requirements of today's electronic products. The line width and spacing of high-end smartphones and tablet computers have generally ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H05K3/06
CPCH05K3/067H05K2203/0779
Inventor 夏海郝意黄志齐丁杰王扩军
Owner SHENZHEN BANMING SCI & TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products