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A kind of preparation method of solar cell

A solar cell and back electrode technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of expensive equipment, complex solar cell process, low production line matching, etc., to reduce production costs, low breakage rate, The effect of high conversion efficiency

Active Publication Date: 2019-10-11
维科诚(苏州)光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the equipment of laser doping machine is relatively expensive, and the process of preparing solar cells using laser doping machine is relatively complicated, which is not compatible with the current conventional production line, and the breakage rate of silicon wafers is about 5‰

Method used

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  • A kind of preparation method of solar cell
  • A kind of preparation method of solar cell
  • A kind of preparation method of solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Such as figure 1 As shown, the realization process of a preparation method of a solar cell structure that reduces electrode recombination:

[0040] The P-type silicon wafer (p-si) used as the substrate (the thickness of the substrate P-type silicon wafer is 180±10um) is subjected to the texturing and cleaning step 101. If the silicon wafer is a single crystal silicon wafer, then 101 uses alkali texturing, Form a uniform pyramid distribution on the surface of the silicon wafer. If the silicon wafer is polycrystalline, 101 uses acid texturing to form a pit-like surface on the surface.

[0041] After the texturing and cleaning step 101 is completed, a silicon nitride film 102 is grown on the corresponding position of the busbar region of the positive electrode, and the thickness of the silicon nitride film is 80 nm.

[0042] Then high temperature diffusion is performed to form the emitter 103, and the silicon nitride film growth region will have a significantly lower diff...

Embodiment 2

[0052]The preparation method is basically the same as that of Embodiment 1, except that the silicon nitride film 105 is deposited on the diffusion surface by plasma enhanced (PECVD) method, and then the silicon nitride film 106 is deposited on the back electrode region.

[0053] Using the above method to prepare 10,000 solar cells, and crushing 15 of them, the average conversion efficiency of 10,000 solar cells is 18.85%.

Embodiment 3

[0055] The preparation method is basically the same as that of Example 1, except that the positive electrode main grid printing 110 is performed first, and then the positive electrode fine grid printing 109 is performed.

[0056] Using the above method to prepare 10,000 solar cells, and 0 pieces were broken, the average conversion efficiency of 10,000 solar cells was 18.9%.

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Abstract

The invention relates to a preparation method of a solar cell. The preparation method comprises the following steps: texturing and cleaning the surface of a silicon wafer; growing a mask in a main grid region of the front surface of the silicon wafer; preparing an emitter on the front surface of the silicon wafer; depositing a silicon nitride film on the emitter, and growing a mask in a back electrode region of the back of the silicon wafer; printing a back electrode on the mask of the back of the silicon wafer; printing a back electric field on the back of the silicon wafer; printing a main grid in the main grid region and on the silicon nitride film, and printing a fine grid on the silicon nitride film; and sintering the silicon wafer, so that the solar cell is prepared. The preparationmethod provided by the invention has the advantages that the masks are grown in the electrode regions, and defects produced in silicon by silver in the electrodes are reduced; the preparation method can be realized in the conventional production line, fewer steps are added, and cost is not obviously increased; and the prepared solar cell is low in breakage rate and high in conversion efficiency.

Description

technical field [0001] The invention relates to a preparation method of a solar cell. Background technique [0002] Solar power is a very promising renewable energy source. Currently, crystalline silicon solar cells account for more than 80% of the photovoltaic market share. Reducing its cost is the goal of continuous efforts in research and industry. The main strategies currently used are to reduce the thickness of silicon wafers and improve the conversion efficiency of silicon solar cells. As the wafer thickness decreases, the influence of surface recombination becomes more and more important; at the same time, the high breakage rate reduces the cell yield. Recombination centers in crystalline silicon, like impurity defects, significantly reduce the efficiency of solar cells. Therefore, studying the surface and bulk recombination behavior of crystalline silicon cells is of great significance for the development of thin-film high-efficiency cells in the photovoltaic indu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 张鑫范维涛孙晨财
Owner 维科诚(苏州)光伏科技有限公司