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Zinc indium tin oxide-based film transistor and manufacturing method thereof

A thin-film transistor and oxide-based technology, applied in the field of electronic information, can solve the problems of low mobility and high preparation temperature of thin-film transistors

Inactive Publication Date: 2018-07-06
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Embodiments of the present invention provide a zinc indium tin oxide-based thin film transistor and its manufacturing method to solve the problems of low mobility and high manufacturing temperature of the thin film transistor

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  • Zinc indium tin oxide-based film transistor and manufacturing method thereof
  • Zinc indium tin oxide-based film transistor and manufacturing method thereof
  • Zinc indium tin oxide-based film transistor and manufacturing method thereof

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Embodiment 1

[0070] The embodiment of the present invention provides a zinc indium tin oxide based thin film transistor and its manufacturing method, which is composed of Zn x In y sn z O:(Li a ,N b ) material to prepare the active layer, use SiO 2 And the high-k material is used as an insulating layer to obtain a transparent thin film transistor. The problems of low mobility of commercial thin film transistors and high preparation temperature of high mobility thin film transistors are solved.

[0071] One aspect of the present invention provides a method for manufacturing a zinc indium tin oxide based thin film transistor.

[0072] The processing flow of a method for manufacturing a zinc indium tin oxide-based thin film transistor provided in an embodiment of the present invention is as follows: figure 1 As shown, the following processing steps are included:

[0073] Step S110: preparing a bottom gate electrode on the substrate.

[0074] On a glass substrate, the bottom gate elect...

Embodiment 2

[0105] This embodiment provides a method for manufacturing a zinc indium tin oxide-based thin film transistor, and its specific implementation steps are as follows:

[0106] Step 1: preparing an ITO bottom gate on a glass substrate.

[0107] Step 2: Prepare an insulating layer on the electrode prepared in step 1, and grow the insulating layer as HfO 2 , with a thickness of 30nm.

[0108] Step 3: Prepare Zn by magnetron sputtering x In y sn z O:(Li a ,N b ) active layer, the thickness is 10nm, x=0.1, y=2, z=0.01, a=0.1, b=0, the sputtering power is 75W, the oxygen / argon pressure ratio is 30%, the growth temperature is room temperature, no annealing.

[0109] Step 4: Prepare Ti / Au source and drain electrodes by magnetron sputtering.

[0110] Produce ITO / HfO 2 / Zn x In y sn z O:(Li a ,N b ) / Ti / Au bottom gate structure zinc indium tin oxide based thin film transistor.

Embodiment 3

[0112] This embodiment provides a method for manufacturing a zinc indium tin oxide-based thin film transistor, and its specific implementation steps are as follows:

[0113] Step 1: On the Si substrate, prepare SiO by thermal oxidation 2 The insulating layer has a thickness of 200 nm.

[0114] Step 2: Prepare Zn on the SiO2 insulating layer by magnetron sputtering x In y sn z O:(Li a ,N b ) active layer, the thickness is 20nm, x=1, y=1.1, z=0.1, a=0.01, b=0, sputtering power is 100W, oxygen / argon pressure ratio is 0%, growth temperature is room temperature, annealing The temperature is 320° C., and the annealing atmosphere is nitrogen.

[0115] Step 3: Prepare Al source, drain and bottom gate by thermal evaporation.

[0116] Produced Al / Si / SiO 2 / Zn x In y sn z O:(Li a ,N b ) / Al bottom gate structure zinc indium tin oxide based thin film transistor.

[0117] Zn produced by the above-mentioned production method two x In y sn z O:(Li a ,N b ) thin film transis...

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Abstract

The invention provides a manufacturing method of a zinc indium tin oxide-based film transistor and aims to manufacture a transparent film transistor. The method comprises steps that a substrate is connected with a bottom grid or a source and a drain, an insulation layer is connected with the grid and an active layer, the insulation layer completely contacts with the active layer, the active layeris connected with the insulation layer, the source and the drain, the insulation layer with the thickness of 30-300nm is prepared, the ZnxInySnzO:(Lia, Nb) active layer with the thickness of 10-50 nmis prepared, targets of the ZnxInySnzO:(Lia, Nb) comprise ZnO, In2O3, SnO2, Li2O, and Zn2N3, the x is greater than 0 and is not greater than 2, the y is greater than 0 and is not greater than 2, the zis greater than 0 and is not greater than 0.5, the a is not smaller than 0 and is not greater than 0.1, the b is not smaller than 0 and is not greater than 0.1, the active layer is prepared through magnetron sputtering, the sputtering power is 75-200W, the oxygen / argon pressure ratio is 0-30%, the growth temperature is in a range of room temperature to 300 DEG C, the annealing temperature is in arange of room temperature to 350 DEG C, and the annealing atmosphere is the air, nitrogen or oxygen. The method is advantaged in that the structure is simple, design is reasonable, and problems of low mobility of commercial film transistors and high preparation temperature of high mobility film transistors are solved.

Description

technical field [0001] The invention relates to the technical field of electronic information, in particular to a zinc indium tin oxide-based thin film transistor and a manufacturing method thereof. Background technique [0002] Thin-film transistors (TFTs) are mainly used in the driving circuits of new flat-panel displays such as TFT-LCD and AMOLED. With people's increasing requirements for display quality, and the rapid development of displays to high resolution, high frequency drive, large size, and virtual reality (VR), the hardware requirements for TFT are also getting higher and higher, requiring TFT to have mobility Large, large current switch ratio, high transparency, low threshold voltage, simple and cheap manufacturing process, etc. Most of the inexpensive displays on the market today are amorphous silicon thin film transistors (a-SiTFT), which have low mobility (<1cm2 / Vs) and cannot achieve high-resolution and high-speed display. And IGZO (indium gallium zinc...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/51H01L29/24H01L21/34
CPCH01L29/24H01L29/51H01L29/517H01L29/66969H01L29/7869
Inventor 李然张希清苏金宝戴仕千麻尧斌田龙杰王琪王晔
Owner BEIJING JIAOTONG UNIV
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