Method for preparing ZnO thin film in a controlled manner

Abstract

The invention belongs to the technical field of semiconductor material growth, and relates to a process for preparing a ZnO thin film with high quality and controlled morphology at a low temperature in an aqueous solution. In the process, a Zn sheet and a ZnCl2 solution are enabled to react in an aqueous solution at a temperature of 70 DEG C, so as to prepare ZnO with high quality. The process includes the following steps: firstly, using abrasive paper to remove obvious stains on the surface of the Zn sheet, washing the Zn sheet using diluted hydrochloric acid, and then performing ultrasonic cleaning using acetone and deionized water respectively; secondly, preparing the ZnCl2 solution with a certain concentration (0.005 mol / L-0.09 mol / L), and placing the treated Zn sheet in the solution; finally, heating the obtained solution in an oil bath at a temperature of 70 DEG C to obtain the ZnO thin film with high quality. According to the invention, the ZnCl2 solution is directly heated, the alkalinity does not need to be adjusted, the operation is simple, the drying process is simplified and shortened, the production cost is reduced, no other impurity ions are introduced, and the problems of a high preparation temperature and a long preparation period are solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth, in particular to a process for preparing a high-quality ZnO thin film with controllable morphology at low temperature in an aqueous solution. Background technique [0002] ZnO is a wide bandgap direct bandgap semiconductor material with wurtzite structure, which has excellent photoelectric properties. At room temperature, the band gap of ZnO single crystal material is 3.37eV, and the exciton binding energy is 60meV, which is much higher than the exciton binding energy of the semiconductor material GaN, 21meV, and 2.3 times that of the thermal ionization energy (26meV) at room temperature. . These characteristics make ZnO become another new hot spot after GaN material, and it is a typical representative of the new third-generation optoelectronic semiconductor material. At present, there are many methods to prepare ZnO semiconductor materials. Among them, the liquid phase gr...

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Problems solved by technology

However, at present, the preparation of ZnO thin films by aqueous solution growth method mainly has problems such as long preparation period, the need to maintain a certain alkalinity in the solution system, relatively high preparation temperature, and difficulty in obtaining materials with uniform morphology (W.K.Tan, K.A.Razak, Z.Lockman , et al.Mater.Lett.91(2013)111-114; J.H.Yang, J.H.Zheng, H.J.Zhai, et al.J.Cryst.Res.Techonl.44(2009)87-91; Y.Jiao, H.J.Zhu , X.F.Wang, et al.J.Cryst.Eng.Comm.12(2010)940-946; R.X.Shi, P.Yang, X.B.Dong, et al.Appl.Surf.Sci.264(2013)162-170)

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