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Monocrystalline silicon crucible

A monocrystalline silicon and crucible technology, which is applied in the field of semiconductor and solar crystal growth equipment, can solve the problems of poor radial thermal conductivity, high oxygen content of monocrystalline silicon, and large energy consumption, so as to increase volume, improve heat transfer, The effect of reducing energy consumption

Inactive Publication Date: 2018-07-27
周俭
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Although the above-mentioned prior art provides a crucible using a combination of carbon materials, since the carbon material is a carbon fiber reinforced carbon matrix composite material composed of pure carbon elements, its molding is formed by laminating a carbon fiber net tire and a carbon cloth into a prefabricated However, its radial thermal conductivity is poor, and there are problems such as excessive energy consumption and high oxygen content in the obtained single crystal silicon, which in turn affects its electrical properties.

Method used

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  • Monocrystalline silicon crucible
  • Monocrystalline silicon crucible

Examples

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Embodiment 1

[0044] Such as figure 1 and figure 2 As shown, a Czochralski monocrystalline silicon crucible described in this embodiment includes a crucible part 1 body configured to hold a quartz crucible; the crucible part 1 includes a hole unit 4 arranged on the side wall of the crucible part 1 body , communicates with the inner and outer spaces of the crucible part 1; the proportion of the hole unit 4 in the circumferential direction of the second crucible unit 3 gradually increases from one side to the other side of the bottom of the crucible part 1, because in the process of refining single crystal silicon , through the setting of the hole unit 4 to better control the transfer of heat, control the temperature distribution of the molten liquid up and down, and at the same time save more energy in the process of growing the crystal, by setting the hole on the side wall of the crucible part 1 The unit 4 increases the gas permeability of the crucible part 1. During the heating process, ...

Embodiment 2

[0046] Such as figure 1 and figure 2 As shown, this embodiment is a further limitation of the first embodiment above. A single crystal silicon crucible described in this embodiment, the material of the crucible part 1 is set as a carbon-carbon composite material, due to the particularity of the carbon-carbon composite material , its structure is interwoven distribution, and its heat transfer effect is poor. Therefore, a number of hole units 4 are arranged on its surface to increase the air permeability and light transmittance of the crucible part 1. During the heating process, heat is transferred from the hole units 4 In the hot crucible part 1, the transfer of heat is increased, and the distribution of the hole units 4 is arranged on the side wall of the crucible part 1, which facilitates the convection control inside the crucible part 1 during the heating process, thereby reducing the temperature of the single crystal silicon oxygen content.

[0047] In addition, due to t...

Embodiment 3

[0049] Such as figure 1 and figure 2 As shown, this embodiment is a further limitation of the first embodiment above. A single crystal silicon crucible described in this embodiment includes a crucible part 1 body configured to hold a quartz crucible; the crucible part 1 includes a first crucible The unit 2 is configured as the bottom of the crucible part 1 and is surrounded by at least two petals. The center of the first crucible unit 2 is provided with a through hole 5; the second crucible unit 3 is connected with the first crucible unit 2 to form a crucible The side wall of the part 1; the hole unit 4 is arranged on the second crucible unit 3 and communicates with the inner and outer spaces of the crucible part 1; the area of ​​the crucible part 1 that contacts the external space through the hole unit 4 is from one side of the bottom of the crucible part 1 to the other gradually increase on one side.

[0050] In the present invention, the crucible is arranged in a two-sta...

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PUM

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Abstract

The invention discloses a monocrystalline silicon crucible, which comprises a crucible part, wherein the crucible part is configured into a quartz containing crucible; the crucible part comprises a first crucible unit, a second crucible unit and hole units; the first crucible unit is arranged at the bottom of the crucible part; the second crucible unit is connected with the first crucible unit andforms the side wall of the crucible part; the hole units are arranged at the second crucible unit and are communicated with the inside and outside space of the crucible part; the proportion of the hole units in the circumference direction of the second crucible unit is gradually increased from one side of the bottom of the crucible part to the other side. Carbon-carbon composite materials are used as the crucible side wall, so that the side wall thickness is reduced; the crucible volume is increased; the yield of monocrystalline silicon is improved; through the arrangement of the side wall hole units, the heat transfer of a heater heating body on the quartz crucible and a silicon melt can be improved; through the arrangement of the hole units with different sizes, different shapes or different distribution densities, the temperature gradient distribution inside the silicon melt can be effectively controlled; the convection of the silicon melt is controlled, so that the oxygen contentof the monocrystalline silicon is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor and solar crystal growth equipment, and in particular relates to a single crystal silicon crucible. Background technique [0002] Monocrystalline silicon is a semiconductor material, which is commonly used to manufacture integrated circuits and other electronic components. After entering the 21st century, in response to increasingly serious environmental problems, the demand for clean energy has promoted the development of the photovoltaic market. Crystalline silicon solar cells It is the leading product in the photovoltaic industry, accounting for 90% of the market share. Driven by the Chinese market, my country's solar photovoltaic power generation industry has developed rapidly, and my country's annual output of solar cells has grown from 1% of the world's share to more than 70% of the world's share. Compared with other crystalline silicon solar cells, monocrystalline silicon solar cells...

Claims

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Application Information

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IPC IPC(8): C30B15/10C30B29/06
CPCC30B15/10C30B29/06
Inventor 周俭
Owner 周俭
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