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Application circuit based on self-excited single-electron spin electromagnetic transistor

A transistor, single-electron technology, applied in the size/direction of the magnetic field, the use of electromagnetic devices for magnetic field measurement, measurement of magnetic variables and other directions, can solve the problems of complex manufacturing process, clumsy equipment operation, unstable high temperature superconductor, etc.

Active Publication Date: 2020-06-12
HUBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although high-temperature superconductors are used to make squid to realize the detection technology in the liquid nitrogen temperature zone, due to the instability of high-temperature superconductors and the complicated manufacturing process, the operation of the equipment is still clumsy and expensive. The development of spin quantum interference transistors at room temperature has become an urgent need.

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  • Application circuit based on self-excited single-electron spin electromagnetic transistor
  • Application circuit based on self-excited single-electron spin electromagnetic transistor
  • Application circuit based on self-excited single-electron spin electromagnetic transistor

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Embodiment Construction

[0024] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, but these embodiments should not be construed as limiting the present invention.

[0025] A kind of application circuit based on the self-excited single-electron spin electromagnetic transistor proposed by the present invention includes a self-excited single-electron spin electromagnetic transistor and a loop resistance R 1 The squit ring composed of, the source, drain and source-drain voltage V of the self-excited single-electron spin electromagnetic transistor ds1 connected, the gate to the gate voltage V g connected, the right side of the squit ring forms a mutual inductance with the RF circuit, and the left side passes the gate voltage V g with the voltage to be measured V s connect. Voltage to be measured V s with inductance L S , load resistance R s form a loop. Among them, T 1 is the transistor, V g is the gate voltage, S and D a...

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Abstract

The invention discloses a self-excited single-electron spin electromagnetic transistor-based application circuit. The circuit comprises a squit (spin quantum interference transistor) ring composed ofa self-excited single-electron spin electromagnetic transistor and a loop resistor R1; the source and drain of the self-excited single-electron spin electromagnetic transistor are connected with a source-drain voltage Vds1; the gate of the self-excited single-electron spin electromagnetic transistor is connected with a gate voltage Vg; the right side of the squit ring forms mutual inductance witha radio frequency circuit; the left side of the squit ring is connected with a voltage to be tested Vs by the gate voltage Vg; the self-excited single-electron spin electromagnetic transistor comprises a substrate provided with a nano silicon carbide thin film structure, a source, a drain and a gate; layered nano silicon carbide single-crystal thin films are embedded into one another so as to formthe nano silicon carbide thin film structure; two ends of the nano silicon carbide thin film structure respectively contact with the source and the drain, so that a source-drain active region can beformed; the upper portion of the nano silicon carbide thin film structure is sequentially provided with an insulating layer and a contact metal layer; and the gate is led out from the contact metal layer. The self-excited single-electron spin electromagnetic transistor-based application circuit of the invention has the advantages of high sensitivity and accurate measurement.

Description

technical field [0001] The invention belongs to the field of quantum science and technology, and relates to an application circuit of a quantum interference device, in particular to an application circuit based on a self-excited single-electron spin electromagnetic transistor. Background technique [0002] Since 1911, Dutch scientist Heike Kamerlingh Onnes (Heike Kamerlingh Onnes) and others discovered that individual metals exhibit superconductivity with zero resistance and zero voltage at low temperatures close to absolute zero. Human research on superconductors Remarkable achievements have been made, and the most important discovery is that in 1962, British physicist Josephson, Brian David discovered the Josephson knot which was later named after him. Josephson calculated the tunneling effect of the superconducting junction and concluded that if two superconductors are close enough, electron pairs can form a superconducting current through the extremely thin insulating la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/06
CPCG01R33/066
Inventor 张洪涛张泽森
Owner HUBEI UNIV OF TECH