Preparation method of single-crystal Bi2Te3 thermoelectric material

A thermoelectric material, single crystal technology, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., to achieve the effect of low requirements, good crystallinity, and excellent thermoelectric performance

Active Publication Date: 2018-08-07
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

[0004] So far, polycrystalline Bi has been pre-synthesized by mechanical alloying 2 Te 3 Powder, combined with the temperature gradient solidification method described in the present invention at 600-750 ° C to prepare single crystal Bi with good crystallinity and compact structure 2 Te 3 Bulk thermoelectric materials have not been reported

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  • Preparation method of single-crystal Bi2Te3 thermoelectric material
  • Preparation method of single-crystal Bi2Te3 thermoelectric material
  • Preparation method of single-crystal Bi2Te3 thermoelectric material

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[0021] In order to make the object, technical solution and advantages of the present invention more clear, the preparation method and actual effect of the present invention will be further described below in conjunction with specific examples and accompanying drawings. It should be understood that the examples used here are only used to explain the present invention, not to limit the scope of the present invention.

[0022] The present invention covers any alternatives, modifications, equivalent methods and schemes made on the spirit and scope of the present invention as defined by the claims. Further, in order to make the public have a better understanding of the present invention, some specific details are described in detail in the detailed description of the present invention below. The present invention can be fully understood by those skilled in the art without the description of these detailed parts.

[0023] A single crystal Bi 2 Te 3 A method for preparing a thermo...

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Abstract

The invention provides a preparation method of a single-crystal Bi2Te3 thermoelectric material and belongs to the technical field of energy source materials. The preparation method comprises the following steps: taking Bi2Te3 powder which is pre-synthesized through a mechanical alloying method as a raw material, keeping pressure under 2MPa for 0.5 to 1.5min in batches and pressing the raw materials into sheets; putting the sheets into a sharp-bottom quartz tube and sealing the tube in vacuum; then putting the quartz tube into a vertical furnace in a manner of putting the sharp bottom of the quartz tube downward; raising the temperature to 600 to 750 DEG C at the speed of 5 to 30 DEG C / h and carrying out heat insulation for 10 to 30h; then slowly cooling to 380 to 550 DEG C at the speed of1 to 3 DEG C / h; then cooling to 30 DEG C at the speed of 10 to 50 DEG C / h, so as to obtain a single-crystal Bi2Te3 block body. The single-crystal Bi2Te3 block body thermoelectric material has an in-plane power factor of 2 to 5mWm<-1>K<-2> and an inter-plane power factor of 0.6 to 2mWm<-1>K<-2>. The mechanical alloying method and a temperature gradient curing method are combined to prepare the single-crystal Bi2Te3 block body thermoelectric material; the preparation method has the characteristics of simple process, simplicity in operation, low requirements on equipment and a preparation environment, low sintering temperature and the like, and the thermoelectric performance of a Bi2Te3 block body is improved. The prepared single-crystal Bi2Te3 thermoelectric material can be widely applied inthe fields of temperature difference power generation, thermoelectric refrigeration and the like.

Description

technical field [0001] The invention belongs to the technical field of energy materials, in particular to a single crystal Bi 2 Te 3 Preparation methods of thermoelectric materials. Background technique [0002] Thermoelectric materials can realize mutual conversion of thermal energy and electrical energy through Seebeck effect and Peltier effect, and realize thermoelectric power generation and thermoelectric refrigeration. Thermoelectric devices composed of N-type and P-type thermoelectric materials have the advantages of small size, no noise, no moving parts, no pollution, high reliability and long life. They are used in industrial waste heat utilization, fluorine-free refrigeration, aerospace, high-performance reception It has broad application prospects in the fields of devices and sensors. The thermoelectric properties of materials can be measured by the dimensionless thermoelectric figure of merit ZT = α 2 σT / κ, where α is the Seebeck coefficient, σ is the electric...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B1/06
Inventor 张波萍唐春梅裴俊吴茵
Owner UNIV OF SCI & TECH BEIJING
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