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Method for preparing zirconium oxide insulating layer thin film and stack layer structure by solution method

A technology of laminated structure and insulating layer, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of complex annealing process and annealing equipment, unfavorable large-area treatment, etc., to avoid ultraviolet light treatment, The effect of low temperature resistance requirements and reduced complexity

Inactive Publication Date: 2018-08-10
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method requires complex annealing process and annealing equipment, and is not conducive to large-area processing

Method used

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  • Method for preparing zirconium oxide insulating layer thin film and stack layer structure by solution method
  • Method for preparing zirconium oxide insulating layer thin film and stack layer structure by solution method
  • Method for preparing zirconium oxide insulating layer thin film and stack layer structure by solution method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Precursor preparation: 2.576g Zr(NO 3 ) 4 ·5H 2 O (zirconium nitrate pentahydrate) was dissolved in 10 ml of ethylene glycol monomethyl ether (2-MOE), stirred and aged to obtain a 0.6 mol / L precursor solution.

[0021] (2) Substrate preparation: deposit a layer of 150nm ITO electrode on the surface of the glass substrate, wash and dry to obtain the ITO glass substrate.

[0022] (3) Spin-coat the precursor solution obtained in step (1) on the ITO glass substrate according to the selected process parameters, the spin-coating speed is 6000rpm, the gluing time is 40s, the gluing times are 3 times, and the annealing temperature between each gluing is 200 °C for 4 min, and then annealed at 200 °C for 1 h to obtain a zirconia insulating layer film.

[0023] (4) On the zirconia insulating layer film of step (3), the circular Al electrode of 100nm is plated by magnetron sputtering, prepares MIM (ITO / ZrO 2 / Al) laminated structure.

[0024] The obtained ZrO of this embod...

Embodiment 2

[0028] (1) Precursor preparation: 1.288g Zr(NO 3 ) 4 ·5H 2 O (zirconium nitrate pentahydrate) was dissolved in 10 ml of ethylene glycol monomethyl ether (2-MOE), stirred and aged to obtain a 0.3 mol / L precursor solution.

[0029] (2) Substrate preparation: deposit a layer of 150nm ITO electrode on the surface of the glass substrate, wash and dry to obtain the ITO glass substrate.

[0030] (3) Spin coat the precursor solution obtained in step (1) on the ITO glass substrate according to the selected process parameters. °C for 4 min, and then annealed at 200 °C for 1 h to obtain a zirconia insulating layer film.

[0031] (4) On the zirconia insulating layer film of step (3), the circular Al electrode of 100nm is plated by magnetron sputtering, prepares MIM (ITO / ZrO 2 / Al) laminated structure.

[0032] The obtained ZrO of this embodiment 2 The leakage current test results of the insulating film are as follows: image 3 shown.

[0033] The test results show that the ZrO pre...

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Abstract

The invention belongs to the technical field of a thin film transistor, and discloses a method for preparing a zirconium oxide insulating layer thin film and a stack layer structure by a solution method. Zr(NO<3>)<4>.5H<2>O is dissolved into ethylene glycol monomethyl ether to be stirred and aged to obtain a precursor solution; an ITO glass substrate is spin coated with the obtained precursor solution, and next, annealing treatment at a temperature of 200 DEG C is performed for 1-2h to obtain the zirconium oxide insulating layer thin film; and the zirconium oxide insulating layer thin film issubjected to magnetron sputtering to plate a circular Al electrode to obtain an MIM stack layer structure. Through Zr(NO<3>)<4>.5H<2>O, the precursor solution comprising a nitrato ZrO<2> insulating layer is obtained, and organic impurities in a wet film can be removed at a relatively low annealing temperature, so that the temperature resistance requirement on the substrate is relatively low; and meanwhile, ultraviolet light treatment needed in the conventional low-temperature process is avoided, so that complexity of the annealing process is lowered.

Description

technical field [0001] The invention belongs to the technical field of thin film transistors, and in particular relates to a method for preparing a zirconia insulating layer thin film and a laminated structure by a solution method. Background technique [0002] A thin film transistor (Thin Film Transistor, TFT for short) is a semiconductor device with a wide range of uses, and its most important use is to drive liquid crystal alignment changes and drive OLED pixels to emit light in displays. The insulating layer in the TFT can play the role of storing capacitance and preventing signal crosstalk, which not only affects the transfer performance of the TFT device, but also affects its stability and life. ZrO 2 It has a high relative permittivity (~27) and a wide band gap (7.8eV), and is a commonly used dielectric layer material. Preparation of ZrO by solution method 2 In the process of insulating thin films, a higher (>350°C) annealing temperature is often required to rem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L49/02H10N97/00
CPCH01L28/40H01L21/02189H01L21/02205H01L21/02282H01L21/02318
Inventor 宁洪龙周尚雄姚日晖蔡炜陶瑞强陈建秋朱镇南魏靖林袁炜健彭俊彪
Owner SOUTH CHINA UNIV OF TECH
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