Composite insulating structure, transistor, and manufacturing method of composite insulating structure and transistor
A composite insulation and transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of large leakage current and poor heat dissipation, and achieve the effect of improving interface characteristics, improving heat dissipation, and reducing leakage current.
Active Publication Date: 2021-04-06
JILIN UNIV
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Problems solved by technology
[0004] In view of this, the present invention provides a composite insulating structure, a transistor, and a method for manufacturing the composite insulating structure and the transistor, so as to at least solve the problems of large leakage current and poor heat dissipation capability in existing electronic devices.
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Embodiment 1
[0049] According to the following method to fabricate thin film transistors, please refer to the specific structure Figure 4 :
[0050] a) Chemical cleaning of silicon substrate
[0051] 1) Perform ultrasonic cleaning on the silicon substrate in the order of acetone and ethanol, and ultrasonically clean each reagent for 5 minutes;
[0052] 2) Ultrasonic cleaning the silicon substrate after organic reagent cleaning with deionized water for 5 minutes, and repeating twice to remove the ethanol on the surface of the substrate;
[0053] 3) Corrode for 1 minute in a mixed solution of HF acid and deionized water at a ratio of 1:10 to remove the surface oxide layer. It was then thoroughly rinsed with deionized water to remove any solutions remaining during the acid rinse and blown dry with nitrogen.
[0054] b) Degassing of the substrate
[0055] Put the cleaned substrate into the MBE sampling chamber, then introduce it into the growth chamber, raise the substrate temperature and...
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Abstract
The invention provides a composite insulating structure, a transistor, and a method for manufacturing the composite insulating structure and the transistor. The composite insulating structure is composed of an AlN thin film layer and an oxide layer formed by oxidation on the surface of the AlN thin film layer, wherein the AlN thin film layer It is used to suppress the large leakage current caused by tunneling while improving the heat dissipation capability of the device, and the oxide layer is beneficial for subsequent use in the manufacture of electrical components due to its low interface state density and high compactness and flatness; The active layer in the transistor is grown on the oxide layer in the composite insulating structure, which utilizes the lower interface state density and higher compactness of the surface of the oxide layer in the composite insulating structure to improve the isolation between the active layer and the insulating layer in the transistor. The interface characteristics between the layers, thereby reducing the leakage current of the transistor, improving the working speed and heat dissipation capacity.
Description
technical field [0001] The disclosure of the present invention relates to the technical field of electronic devices, in particular to a composite insulating structure, a transistor, and a method for manufacturing the composite insulating structure and the transistor. Background technique [0002] Currently, many electronic devices use SiO 2 or SiN X etc. as insulating layer materials to prepare devices. With the rapid development of microelectronics technology and the improvement of device integration, the feature size of the device is continuously reduced, and the thickness of the insulating layer in the device is continuously thinned, which leads to the formation of a large amount of tunneling leakage current when electrons cross the insulating layer, resulting in a large power consumption of the device. Increase. The reduction of the feature size of the device also leads to the shortening of the channel length of the device. Although it increases the operating speed of...
Claims
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IPC IPC(8): H01L21/28H01L29/423H01L29/51H01L29/786H01L21/34
CPCH01L21/28158H01L29/42364H01L29/513H01L29/517H01L29/518H01L29/66969H01L29/7869
Inventor 吴国光姜楠张宝林杜国同
Owner JILIN UNIV